The embodiments of the present disclosure provide a lens, a lens array, a displaying module and a displaying device. The lens includes a main lens body and a light emitting member; the main lens body is a conical housing having an inner cavity, and the light emitting member is disposed at a first end of the main lens body; a first quadric surface is disposed in the inner cavity of the main lens body; a second quadric surface is disposed on an inner wall of the main lens body; the first quadric surface is convex toward the first end of the main lens body, and the second quadric surface is convex toward a second end of the main lens body.

A light emitting element can include a first semiconductor layer, a first electrode disposed on the first semiconductor layer; an active layer disposed on the first semiconductor layer, the active layer being spaced apart from the first electrode; a second semiconductor layer disposed on the active layer; and a second electrode disposed on the second semiconductor layer, in which a first part of the active layer between the first electrode and the second electrode is wider than a second part of the active layer between the first electrode and the second electrode.

According to one aspect of the present disclosure, there may be provided a display device including: a display board; a plurality of light sources supported by the display board to generate light; and an electrode body electrically connecting the display board and the plurality of light sources, a peak wavelength difference of the light emitted from the plurality of light sources being 5 nm or less.

A display device includes a first light emitting element group including at least one first light emitting element emitting a first light having a central wavelength greater than 450 nm and less than about 485 nm, a second light emitting element group including at least one second light emitting element emitting a second light having a central wavelength of about 450 nm or less, a third light emitting element group including at least one third light emitting element emitting a third light having a central wavelength of about 450 nm or less, and a color conversion layer disposed on the first, the second, and the third light emitting element group and including a first color conversion pattern which converts the second light emitted from the second light emitting element group and a second color conversion pattern which converts the third light emitted from the third light emitting element group.

A display device includes a pixel array substrate, light emitting elements, a lower plate and a black pattern layer. The pixel array substrate has a display surface and a bottom surface opposite to the display surface. The display surface has pixel regions and light transmitting regions arranged alternately. The light emitting elements are disposed on the display surface and electrically connected to the pixel array substrate, where the light emitting elements are located in the pixel regions. The bottom surface is located between the display surface and the lower plate. The black pattern layer is disposed between the pixel array substrate and the lower plate, and has light shielding parts and first opening areas arranged alternately. The light shielding parts overlap with the pixel regions, and the first opening areas overlap with the light transmitting regions.

A display panel includes: a substrate; light-emitting elements located on a side of the substrate; a first light-blocking layer located on a side of the first light-emitting unit away from the substrate and comprising a first opening; a second light-blocking layer located on a side of the first light-blocking layer away from the substrate and comprising a second opening. One of the light-emitting elements comprises a first light-emitting unit and a second light-emitting unit. Along a direction perpendicular to a plane of the substrate, both the first opening and the second opening at least partially overlap with the first light-emitting unit. An area of the first opening is greater than an area of the second opening, and an orthographic projection of the second light-blocking layer on the plane of the substrate at least partially covers an edge of the first opening.

An optoelectronic device (100) comprises a semiconductor light-emitting component (101) capable of emitting light at a first wavelength, a cavity (107) filled with a semiconductor wavelength conversion material (103) disposed in a path of the light emitted by the semiconductor light-emitting component (101) for converting the first wave-length into a second wavelength and a first multilayer interference reflector (105) provided at a bottom of the cavity (107) directed to the light-emitting component (101). The first multilayer interference reflector (105) is configured to be transmitive for the first wavelength and reflective for the second wavelength and a second multilayer interference reflector (106) is provided at a top (106) and sidewalls (106) of the cavity (107). The second multilayer interference reflector (106) is configured to be transmitive for the second wavelength and to be reflective for the first wavelength. An associated method of making the optoelectronic device is also provided.

An optoelectronic device (100) comprises a semiconductor light-emitting component (101) capable of emitting light at a first wavelength, a cavity (107) filled with a semiconductor wavelength conversion material (103) disposed in a path of the light emitted by the semiconductor light-emitting component (101) for converting the first wave-length into a second wavelength and a first multilayer interference reflector (105) provided at a bottom of the cavity (107) directed to the light-emitting component (101). The first multilayer interference reflector (105) is configured to be transmitive for the first wavelength and reflective for the second wavelength and a second multilayer interference reflector (106) is provided at a top (106) and sidewalls (106) of the cavity (107). The second multilayer interference reflector (106) is configured to be transmitive for the second wavelength and to be reflective for the first wavelength. An associated method of making the optoelectronic device is also provided.

This disclosure provides an array substrate, including: a display region and a peripheral region. The peripheral region includes at least one first sensor. The first sensor includes a photodiode and a driving circuit which are electrically connected to each other. The photodiode includes: an anode, a cathode and a photosensitive material layer. The array substrate includes: a base substrate, a plurality of thin film transistors, a common electrode and a pixel electrode. The common electrode is reused as an anode of the photodiode. The pixel electrode is reused as a cathode of the photodiode. One of the plurality of thin film transistors is reused as a first transistor of the driving circuit.

This disclosure provides an array substrate, including: a display region and a peripheral region. The peripheral region includes at least one first sensor. The first sensor includes a photodiode and a driving circuit which are electrically connected to each other. The photodiode includes: an anode, a cathode and a photosensitive material layer. The array substrate includes: a base substrate, a plurality of thin film transistors, a common electrode and a pixel electrode. The common electrode is reused as an anode of the photodiode. The pixel electrode is reused as a cathode of the photodiode. One of the plurality of thin film transistors is reused as a first transistor of the driving circuit.