A compound having the formula [L.sub.A].sub.yIr[L.sub.B].sub.x is disclosed, where L.sub.A is selected from one of the following: ##STR00001##
The compounds have at least one pyridyl dibenzo-substituted ligand that coordinates to metal center from the sterically hindered position as exemplified by L.sub.A. Because of this unique configuration, the compounds display better photo-physical and thermal properties and can be used in OLED devices to improve their performance, particularly with respect to the device's lifetime.

A compound of formula (I): (Core)n-(X)m wherein Core is a core group; n is 0 and m is 1, or n is 1 and m is at least 1; and X is a group of formula (II): wherein: R.sup.1, R.sup.3 and R.sup.5 are each independently H or a substituent; R.sup.2 and R.sup.4 are each a substituent; one of R.sup.1-R.sup.5 is a direct bond or divalent linking group linking the group of formula (II) to Core in the case where n is 1; x and y are 0, 1, 2, 3 or 4; and the compound of formula (I) is substituted with at least one ionic substituent. The compound may be used as an n-dopant to dope an organic semiconductor. ##STR00001##

The invention relates to a light extraction substrate having a light extraction layer. The light extraction layer includes boron, boroate, and/or borosilicate as well as nanoparticles.

An organic light emitting device having an anode, a cathode and an organic layer disposed between the anode and the cathode is provided. In one aspect, the organic layer comprises a compound having at least one zwitterionic carbon donor ligand. In another aspect the organic layer comprises a carbene compound, including the following: ##STR00001##

A light-emitting diode structure, a fabrication method therefor, and a display panel. The light-emitting diode structure includes: a base substrate; and a first electrode layer, a light-emitting layer and a second electrode layer that are successively stacked on the base substrate, wherein the second electrode layer includes a first coarse surface that is located at a side far from the base substrate.

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.

A photoelectric device is disclosed. The photoelectric device includes a first electrode, a second electrode, and an electrolyte disposed between the first electrode and the second electrode. The second electrode includes a transparent layer for allowing light to penetrate into the second electrode, an electron transport layer coupled to the transparent layer, and a genetically hybridized fluorescent silk layer as a photo-sensitizer coupled to the electron transport layer.

An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The at least two structural units include a type A1 structural unit and a type A2 structural unit. The type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface. The two types of QD structural units are arranged alternately along the radial direction, and the energy levels in adjacent QD structural units having gradient alloy composition structures are continuous.

A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).