Patent classifications
H10K2102/321
Electric device and display device comprising quantum dots with improved luminous efficiency
An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.
Organic Light-Emitting Display Panel and Device
An organic light-emitting display panel and an organic light-emitting display device are disclosed, wherein the organic light-emitting display panel includes: a substrate, a cathode, a first auxiliary functional structure, a light-emitting structure and an anode that are successively laminated; wherein, the material of both the anode and the cathode is silver or a silver-containing metallic material, and a micro-cavity structure is formed between the cathode and the anode; the first auxiliary functional structure includes at least one of an electron injection layer, an electron transport layer and a hole blocking layer, and the first auxiliary functional structure is multiplexed as a micro-cavity length adjusting structure.
Composition, quantum dot-polymer composite, and display device including same
A composition including a quantum dot, a dispersing agent for dispersing the quantum dot, a polymerizable monomer including a carbon-carbon double bond, an initiator, a hollow metal oxide particulate, and a solvent, and a quantum dot-polymer composite manufactured from the composition.
LIGHT EMITTING DEVICE
The light-emitting device includes a thin film transistor having a channel layer made of a first n-type semiconductor; a cathode electrically connected to a drain of the thin film transistor and made of a second n-type semiconductor; an anode facing the cathode; and a light-emitting layer provided between the cathode and the anode.
OLED device structures
Devices having multiple multicomponent emissive layers are provided, where each multicomponent EML includes at least three components. Each of the components in each EML is a host material or an emitter. The devices have improved color stability and relatively high luminance.
Organic electroluminescent materials and devices
A compound comprising a first ligand L.sub.A of Formula I, ##STR00001##
is disclosed. In the structure of Formula I, ring A is a 5-membered or 6-membered carbocyclic or heterocyclic ring; Z.sup.1-Z.sup.4 are each independently C or N; at least two consecutive Z.sup.1-Z.sup.4 are C, and are fused to a structure of Formula II ##STR00002##
or Formula III ##STR00003##
Y.sup.1; Y.sup.1 and Y.sup.2 are each independently O, S, Se, CRR′, SiRR′, or GeRR′; each R.sup.A, R.sup.B, R.sup.C, R, and R′ is a hydrogen or a substituent; and any two substituents may be joined or fused together to form a ring. In the compound, L.sub.A is complexed to a metal M by the dashed lines in Formula I to form a five-membered chelate ring, and M has an atomic weight greater than 40. Organic light emitting devices and consumer products containing the compounds are also disclosed.
Organic molecules for use in optoelectronic devices
The invention relates to an organic molecule, in particular for use in organic optoelectronic devices. According to the invention, the organic molecule has one first chemical moiety with a structure of formula I, ##STR00001## and one second chemical moiety with a structure of formula II, ##STR00002## wherein the first chemical moiety is linked to the second chemical moiety via a single bond.
ELECTROLUMINESCENT DIODE AND DISPLAY DEVICE
The present disclosure discloses an electroluminescent diode and a display device. The electroluminescent diode includes a cathode, a luminescent layer, a hole transport layer and an anode. The hole transport layer has a hole injection control structure, the hole injection control structure includes a first hole conduction layer and a second hole conduction layer that are stacked, and a material of the second hole conduction layer is a material used in the first hole conduction layer that is P-type doped. The hole injection control structure may significantly improve the performance of hole injection in the electroluminescent diode, so as to balance a number of carriers in the electroluminescent diode, thereby effectively improving the luminescence performance and prolonging the service life thereof.
QUANTUM DOT MATERIAL AND RELATED APPLICATIONS
Embodiments of the present disclosure disclose a quantum dot material and related applications. The quantum dot material includes: quantum dots, and ligands connected with the quantum dots, and further includes isolation units, wherein the isolation units are cyclic molecules, and the ligands are configured to bond with the cyclic molecules through electrostatic force, so that the quantum dots and the ligands are wrapped with the multiple isolation units; and the isolation units are configured to isolate the quantum dots.
NANOSTRUCTURES, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE INCLUDING THE SAME
Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal, wherein the nanostructures further include tellurium, wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1, wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.