Provided is a light-emitting diode and a method for preparing the same. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode stacked in sequence, in which the perovskite light-emitting layer includes a first sublayer and a second sublayer stacked in sequence, with a material for forming the first sublayer including an inorganic perovskite material, and with a material for forming the second sublayer being an organic perovskite material.

A composite quantum-dot optical film comprises a quantum-dot layer and a composite structure disposed on the quantum-dot layer, wherein the composite structure comprises a first substrate, a second substrate, and a first barrier layer, wherein each of the first substrate and the second substrate comprises a polymer material, wherein the barrier layer being made of organic material and capable of being water-resistant is disposed between the first substrate and the second substrate.

A method of manufacturing microstructure array, a microstructure array, a micro-light-emitting diode, and a method for manufacturing the same, and a display device. The method of manufacturing microstructure array includes: preparing a red light-emitting perovskite precursor solution, a green light-emitting perovskite precursor solution, and a blue light-emitting perovskite precursor solution; coating the red light-emitting perovskite precursor solution, the green light-emitting perovskite precursor solution, and the blue light-emitting perovskite precursor solution, on a substrate having partitioned first, second, and third regions to form a red light-emitting perovskite precursor film, a green light-emitting perovskite precursor film, and a blue light-emitting perovskite precursor film, respectively; disposing a mold having a plurality of concave micropatterns on the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film, respectively; heat-treating the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film in a plurality of concave micropatterns to obtain each of red light-emitting perovskite nanocrystals, green light-emitting perovskite nanocrystals, and blue light-emitting perovskite nanocrystals, and removing the mold to form a microstructure array.

Curable ink compositions include at least one aromatic (meth)acrylate, at least one multifunctional (meth)acrylate with heteroaromatic groups, fused aromatic groups, heteroalkylene groups, or a group containing both heteroalkylene and aromatic groups, and a photoinitiator. The curable ink composition is Inkjet printable, having a viscosity of 30 centipoise or less at a temperature of from room temperature to 35° C., and is free from solvents. The ink composition, when printed and cured has a refractive index of 1.55 or greater, and is optically clear. The cured ink composition, when cured to a thickness of from 1-16 micrometers, has a surface roughness of less than or equal to 5 nanometers.

A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 4 mg/mL to 8 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 10 mg/mL to 14 mg/mL per milliliter of solvent.

A light-emitting element includes, in order of listing, an anode, an hole transport layer, an emission layer, and a cathode. The light-emitting element includes an reducing material disposed in at least a part between the anode and the hole transport layer, being in contact with the anode and the hole transport layer, and containing a reducing material that reduces a layer having the hole transport layer. The reducing material contains, in a structure of the reducing material, hydrogen either at a concentration ratio of 1 to 1 with resect to a base metal, or at a larger concentration ratio than the base metal.

A light-emitting device with high resistance to heat in a fabrication process is provided. The light-emitting device includes an EL layer between an anode and a cathode, and the EL layer includes at least a light-emitting layer. The light-emitting device includes, between the light-emitting layer and the cathode, a first layer in contact with the light-emitting layer. The light-emitting layer includes a light-emitting substance, a first organic compound, and a second organic compound. The first layer includes a third organic compound different from the first organic compound and the second organic compound. The light-emitting substance emits green to yellow light. The third organic compound includes a bicarbazole skeleton and a heteroaromatic ring skeleton including one selected from a pyridine ring, a diazine ring, and a triazine ring.

Disclosed are an organic light emitting display device and lighting apparatus for vehicles using the same. The organic light emitting display device includes a first layer including a first organic layer and a first emission layer on a first electrode, a second layer including a second emission layer and a second organic layer on the first layer, a second electrode on the second layer, and a third organic layer between the first layer and the second layer. A thickness of the first emission layer is equal to or greater than a thickness of each of the first organic layer and the second organic layer.

A method of fabricating a flexible organic light-emitting diode (OLED) display panel, the method comprising the steps of: step S1, providing a rigid substrate on which a flexible base is formed; step S2, forming a thin film transistor array layer on the flexible base; step S3, forming an OLED display unit on the thin film transistor array layer; step S4, forming an encapsulation layer on the OLED display unit; step S5, forming a protective layer on the encapsulation layer, wherein the protective layer is adhered to a surface of the encapsulation layer away from the OLED display unit by a thermal sensitive adhesive; step S6, peeling off the rigid substrate, and completing a support film to be attached under the flexible base; step S7, removing the protective layer; and step S8, forming a protective cover on the encapsulation layer.

A display apparatus includes a display panel including a display region, a non-display region adjacent to the display region, and a pixel that provides light to the display region, a thermal spreading sheet disposed below the display panel and including a first layer, a second layer, and a third layer, the second layer having a thermal conductivity less than a thermal conductivity of the first layer, and an adhesive layer disposed between the thermal spreading sheet and the display panel and including a light absorbing material. The first layer and the third layer each have a horizontal thermal resistance in a range of about 1 K/J to about 20 K/J, and the second layer has a vertical thermal resistance in a range of about 500 K/J to about 2000 K/J.