The present invention relates to a light absorption layer for forming a photoelectric conversion element and an intermediate band solar cell excellent in quantum yield of two-step photon absorption, a photoelectric conversion element, and an intermediate band solar cell having the light absorption layer, the light absorption layer of the present invention containing a perovskite compound and a quantum dot having an upper end of a valence band at an energy level more negative than an upper end of a valence band of the perovskite compound, and having an intermediate band.

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes independent from each other; a second electrode disposed to be opposed to the first electrode; an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode; and a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer.

There are provided a photoelectric conversion film containing a quantum dot of a compound semiconductor that contains an Ag element, at least one element selected from an Sb element or a Bi element, and at least one element selected from an Se element or a Te element; a dispersion liquid that is used in the formation of the photoelectric conversion film; a photodetector element including the photoelectric conversion film; and an image sensor including the photodetector element.

An object of the present invention is to provide a curable composition comprising a fluorescent particle containing a perovskite compound, wherein a decrease in the quantum yield of a film formed by curing the curable composition due to heat can be suppressed; a film formed by curing the curable composition; and a laminated body and a display apparatus comprising the film. Provided are a curable composition comprising a fluorescent particle (A) containing a perovskite compound, a photopolymerizable compound (B), a photopolymerization initiator (C), and an antioxidant (D); a film formed by curing the curable composition; and a laminated body and a display apparatus comprising the film.

The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.

The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.

The present invention provides a light absorption layer for forming a photoelectric conversion element and a solar cell excellent in photoelectric conversion efficiency, a photoelectric conversion element and a solar cell having the light absorption layer, and a method for manufacturing a light absorption layer having few voids. The light absorption layer of the present invention contains a perovskite compound and a quantum dot containing an aliphatic amino acid.

Colloidal synthesis of narrowly disperse, near IR emitting Group IV alloy quantum dots with wide range of Sn compositions via reduction of precursor halides is provided, allowing for less-toxic, earth abundant, and silicon-compatible Group IV alloy quantum dots for application in a broad range of electronic and photonic technologies.

Photodiodes configured to convert incident photons in the short-wave infrared (SWIR) to electric current, where the photodiodes have a PbS/PbCl.sub.x core/shell nanocrystal absorber layer. The PbCl.sub.x shell in the PbS/PbCl.sub.x nanocrystals provide native passivation in the (100) crystal facets and enable removal of pre-device processing ligands and ligand exchange on the (111) crystal facets of the PbS/PbCl.sub.x nanocrystals such that the photodiode exhibits reduced current densities under reverse bias and greater infrared photoresponse, providing improved device performance as compared to photodiodes having absorber layers formed from PbS core nanocrystals alone.