The present invention relates to a light absorption layer for forming a photoelectric conversion element and an intermediate band solar cell excellent in quantum yield of two-step photon absorption, a photoelectric conversion element, and an intermediate band solar cell having the light absorption layer, the light absorption layer of the present invention containing a perovskite compound and a quantum dot having an upper end of a valence band at an energy level more negative than an upper end of a valence band of the perovskite compound, and having an intermediate band.

An organic n-dopant for doping organic electron transport materials. The n-dopant comprising at least one proazaphosphatrane compound having a triple N-substituted phosphorus atom of the formula

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An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

The present invention provides a light absorption layer for forming a photoelectric conversion element and a solar cell excellent in photoelectric conversion efficiency, a photoelectric conversion element and a solar cell having the light absorption layer, and a method for manufacturing a light absorption layer having few voids. The light absorption layer of the present invention contains a perovskite compound and a quantum dot containing an aliphatic amino acid.

A solar cell includes a first substrate, a first hole transport layer, a first photoelectric conversion layer containing a perovskite compound, and a second photoelectric conversion layer containing a photoelectric conversion material in this order. A band gap of the perovskite compound is greater than a band gap of the photoelectric conversion material. With respect to an absorption wavelength of the first photoelectric conversion layer 3, a refractive index n.sub.A of the first hole transport layer 2 satisfies refractive index of the first substrate≤n.sub.A≤refractive index of the first photoelectric conversion layer. Further, with respect to a transmission wavelength of the first photoelectric conversion layer 3 and an absorption wavelength of the second photoelectric conversion layer 5, a refractive index n.sub.B of the first hole transport layer 2 satisfies refractive index of the first substrate≤n.sub.B≤refractive index of the first photoelectric conversion layer.

A solar cell includes a first substrate, a first electrode layer, a first electron transport layer, a first photoelectric conversion layer, a first hole transport layer, a second electrode layer, a third electrode layer, a second electron transport layer, a second photoelectric conversion layer, a second hole transport layer, a fourth electrode layer, and a second substrate that are disposed in the order stated. The first photoelectric conversion layer includes a first perovskite compound, and the second photoelectric conversion layer includes a second perovskite compound. The first perovskite compound has a bandgap greater than a bandgap of the second perovskite compound.

Disclosed are a perovskite photoelectric device and a method of fabricating the same. A perovskite photoelectric device according to an embodiment of the present invention includes a first electrode; a hole transport layer formed on the first electrode; a perovskite layer formed on the hole transport layer and made of a first perovskite compound; an electron transport layer formed on the perovskite layer; a second electrode formed on the electron transport layer; and a graded wall formed on the hole transport layer and the perovskite layer and made of a second perovskite compound, wherein the first perovskite compound and the second perovskite compound are represented by Formula 1 below, and the graded wall suppresses movement of anions included in the perovskite layer:

A.sub.aM.sub.bX.sub.c  [Formula 1]

where A is a monovalent cation, M is a divalent or trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3B=c when M is a trivalent metal cation, and a, b and c are natural numbers.

According to an aspect, a detection device includes: photodiodes provided on a substrate; transistors corresponding to the photodiodes; a first organic insulating film that covers the transistors; first electrodes that are between the first organic insulating film and the photodiodes in a direction orthogonal to the substrate and are provided corresponding to the photodiodes; a second electrode provided so as to extend across the photodiodes; an insulating film between adjacent first electrodes, and a second organic insulating film that covers an inside of a contact hole provided in the first organic insulating film. The photodiodes includes a first carrier transport layer, an active layer, and a second carrier transport layer that are stacked on the substrate. The first carrier transport layer, the active layer, and the second carrier transport layer are provided so as to cover each of the first electrodes, the insulating film, and the second organic insulating film.

A solar cell device is presented. The solar cell device comprises a layered structure comprising an electron transport layer and a hole transport layer and a heterojunction interface region between the electron transport and hole transport layers configured to define at least one charge generation region forming at least one junction between them, wherein at least one of the electron transport layer and the hole transport layer comprises at least one modulated doping layer at a predetermined distance from said at least one junction, said at least one modulated doping layer thereby inducing variation of an energy band structure at a vicinity of said at least one junction generating electric field applied to charge carriers increasing efficiency of generation and/or collection of the charge carriers.

A solar cell device is presented. The solar cell device comprises a layered structure comprising an electron transport layer and a hole transport layer and a heterojunction interface region between the electron transport and hole transport layers configured to define at least one charge generation region forming at least one junction between them, wherein at least one of the electron transport layer and the hole transport layer comprises at least one modulated doping layer at a predetermined distance from said at least one junction, said at least one modulated doping layer thereby inducing variation of an energy band structure at a vicinity of said at least one junction generating electric field applied to charge carriers increasing efficiency of generation and/or collection of the charge carriers.