A flexible infrared irradiation and temperature sensor is provided. The sensor includes a substantially cubic deformable rubber substrate and a conductive layer embedded in the rubber substrate, wherein the conductive layer comprises a middle portion comprising a composite film of carbon nanotubes (CNTs) and nickel phthalocyanine (NiPc); and one or more exterior portions comprising carbon nanotubes, wherein the one or more exterior portions do not include NiPc.

An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.

The present invention provides a nitrogen-containing fused heterocyclic compound and applications thereof. When the nitrogen-containing fused heterocyclic compound of the present invention is used as a host material of an emitting layer of an organic light-emitting element, the organic light-emitting element has a lower driving voltage (4.3 V or lower), a higher current efficiency (16 Cd/A or higher) and a longer service life (230 h or higher).

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

The present invention is to provide a photoelectric conversion element that exhibits excellent external quantum efficiency and responsiveness to light at all wavelengths in a red wavelength range, a green wavelength range, and a blue wavelength range, an imaging element, an optical sensor, and a compound. The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

##STR00001##

A photo-capacitance sensor includes an input surface and one or more light sources arranged to illuminate a portion of the input surface. The photo-capacitance sensor also includes an array of photo-capacitors arranged to receive light from the one or more light sources which is reflected from an object in contact with, or proximate to, the illuminated portion of the input surface. The array of photo-capacitors is configured for detecting a reflective pattern of the object.

The present disclosure is related to organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds as extreme ultraviolet (EUV) photoresist. Organometallic sandwich bis(cyclopentadienyl)tin oxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2SnO, di(cyclopentadienyl)tin dialkoxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2Sn(OR.sup.1)(OR.sup.2), and half-sandwich (cyclopentadienyl)tin triamide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)Sn(NR.sup.1.sub.2)(NR.sup.2.sub.2)(NR.sup.3.sub.2) are described including the methods for preparation and purification, wherein R.sup.1, R.sup.2, R.sup.3 are independently H, alkyl (linear or branched), alkenyl, alkynyl and cycloalkyl group with 1 to 20 carbon atoms, and aryl group with 6-20 carbon atoms. Sandwich and half-sandwich comprise cyclopentadienyl (C.sub.5H.sub.5), or substituted cyclopentadienyl (η.sup.5-C.sub.5H.sub.4R, η.sup.5-C.sub.5H.sub.3R.sub.2, η.sup.5-C.sub.5H.sub.2R.sub.3, η.sup.5-C.sub.5HR.sub.4, and η.sup.5-C.sub.5R.sub.5), R is H, alkyl, alkenyl, alkynyl, cycloalkyl group with 1 to 20 carbon atoms and aryl group with 6-20 carbon atoms. The solution compositions of organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds are suitable for EUV photoresists, and/or the precursors of EUV photoresists for radiation sensitive coating and forming nanoscale patterns through photolithography.

The present invention is to provide a photoelectric conversion element having an excellent photoelectric conversion efficiency for light in a wide wavelength range and excellent manufacturing suitability. In addition, an imaging element, an optical sensor, and a compound are provided. A photoelectric conversion element includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, and the photoelectric conversion film contains a compound represented by Formula (1).

##STR00001##

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):

E2>E1  (1)

E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element

E2 [eV]: band gap of the first organic compound

E3<E4−0.2  (2)

E4−0.4<E5<E4  (3)

E3 [eV]: electron affinity of material used for the first interfacial layer

E4 [eV]: electron affinity of the quantum dots

E5 [eV]: electron affinity of the first organic compound.