The present invention relates to a light absorption layer for forming a photoelectric conversion element and an intermediate band solar cell excellent in quantum yield of two-step photon absorption, a photoelectric conversion element, and an intermediate band solar cell having the light absorption layer, the light absorption layer of the present invention containing a perovskite compound and a quantum dot having an upper end of a valence band at an energy level more negative than an upper end of a valence band of the perovskite compound, and having an intermediate band.

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

Photonic devices are provided comprising a photoactive layer and at least one additional layer, wherein a surface of the photoactive layer or a surface of the at least one additional layer has imprinted thereon a quasi-random pattern of nanostructures corresponding to a quasi-random pattern of nanostructures defined in a recording layer of a pre-written optical media disc. Methods of patterning a layer of a photonic device are also provided.

The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

The present invention relates to a polymer, an organic solar cell comprising the polymer, and a perovskite solar cell comprising the polymer. The polymer according to the present invention has excellent absorption ability for visible light and an energy level suitable for the use as an electron donor compound in a photo-active layer of the organic solar cell, thereby increasing the light conversion efficiency of the organic solar cell. In addition, the polymer according to the present invention has high hole mobility, and is used as a compound for a hole transport layer, and thus can improve efficiency and service life of the perovskite solar cell without an additive.

A photoelectric conversion element comprises: a photoelectric conversion layer; a first compound layer including a first supporting member and a first compound, the first compound being supported by the first supporting member, being not in contact with the photoelectric conversion layer, and being liquid or gelatinous in an environment to use the element; and a second compound layer including a second supporting member and a second compound, the second compound being supported by the second supporting member, being not in contact with the photoelectric conversion layer and the first compound, and being liquid or gelatinous in the environment.

A photovoltaic element including at least one photovoltaic cell at least partially segmented and having a base electrode, a top electrode, and a layer system comprising at least one photoactive layer, wherein the layer system is arranged between the base electrode and the top electrode, the segments are configured such that at least the top electrode and the layer system of one of the segments are separated from the top electrode and the layer system of another segment by at least one cavity to prevent contact between one another, the at least one cavity is formed substantially vertically relative to the layer system of the at least one photovoltaic cell, and the segments are electrically conductively connected in parallel with one another such that a flow of electric current through the at least one photovoltaic cell is distributed over each of the segments.

A novel display apparatus is provided. The display apparatus includes a first layer including a plurality of pixel circuits, a second layer provided over the first layer, a plurality of optical lenses provided over the second layer, a display region, and a plurality of light-receiving regions. The display region includes a first pixel circuit provided in the first layer and a light-emitting device provided in the second layer. The light-receiving region includes a second pixel circuit provided in the first layer and a light-receiving device provided in the second layer. The plurality of light-receiving regions are provided around the display region. The optical lens is provided at a position overlapping with the light-receiving region.

Photoelectric conversion element including: substrate; first electrode; hole-blocking layer; photoelectric conversion layer; and second electrode, the photoelectric conversion layer including electron-transporting layer and hole-transporting layer, wherein in photoelectric conversion element edge part in direction orthogonal to stacking direction of the substrate, first electrode, hole-blocking layer, photoelectric conversion layer, and second electrode, electron-transporting layer outermost end is positioned inside than first electrode outermost end, hole-transporting layer outermost end is positioned outside than second electrode outermost end, and the second electrode outermost end is positioned inside than the electron-transporting layer outermost end, and height of edge part including the first electrode outermost end in the stacking direction is smaller than total of average thicknesses of first electrode, hole-blocking layer, and electron-transporting layer, where the height is distance between substrate surface at first electrode side and portion of first electrode closest to second electrode side in the photoelectric conversion element edge part.