A multi-junction photovoltaic device comprising a layer of metal oxynitride between a first sub-cell and a second sub-cell is disclosed, the first sub-cell having a layer comprising a perovskite light absorber material. In addition, a method of manufacturing said multi junction photovoltaic device is disclosed. The metal oxynitride is preferably titanium oxynitride. Advantageously, the device may be produced in a simple, fast, consistent and inexpensive manner, whilst the properties of the titanium oxynitride layer may be tuned to avoid the occurrence of local shunt paths and to reduce reflection losses.

A multi-junction photovoltaic device comprising a layer of metal oxynitride between a first sub-cell and a second sub-cell is disclosed, the first sub-cell having a layer comprising a perovskite light absorber material. In addition, a method of manufacturing said multi junction photovoltaic device is disclosed. The metal oxynitride is preferably titanium oxynitride. Advantageously, the device may be produced in a simple, fast, consistent and inexpensive manner, whilst the properties of the titanium oxynitride layer may be tuned to avoid the occurrence of local shunt paths and to reduce reflection losses.

A solar cell according to the present embodiment may have a tandem structure comprising a photovoltaic part, wherein the photovoltaic part comprises: a first photovoltaic part comprising: a photovoltaic layer composed of a perovskite compound; and a second photovoltaic part comprising a semiconductor substrate. Here, in the second photovoltaic part, a first semiconductor layer and a second semiconductor layer, which are formed separately from the semiconductor substrate on one side or the other side of the semiconductor substrate, may have different structures from each other.

An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.

A tandem photovoltaic device includes: an upper cell unit, a lower cell unit and a tunnel junction positioned between the upper cell unit and the lower cell unit; the tunnel junction includes an upper transport layer, a lower transport layer, and an intermediate layer positioned between the upper transport layer and the lower transport layer, the intermediate layer is an ordered defect layer, or, the intermediate layer is a continuous thin layer, or, the intermediate layer includes a first layer in contact with the lower transport layer and a second layer in contact with the upper transport layer; a doping concentration of the first layer is 10-10,000 times of a doping concentration of the lower transport layer, and the doping concentration of the first layer is less than 10.sup.21cm.sup.−3; a doping concentration of the second layer is 10-10,000 times of a doping concentration of the upper transport layer.

The present disclosure relates to a method for manufacturing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded on a silicon solar cell. According to the present disclosure, a first microporous precursor thin film is formed through a sputtering method on a substrate having an unevenly structured texture and then a halide thin film is formed on the first microporous precursor thin film to form a perovskite absorption layer, whereby light reflectance can be reduced and a path of light can be increased, and accordingly a light absorption rate can be increased.

Provided is a semiconductor element that can generate power with high efficiency and has high durability. A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a second photoactive layer including silicon; a second doped layer; a passivation layer; and a second electrode in this order. The interlayer interface existing between the first photoactive layer and the adjacent layer is a substantially smooth surface, and the multilayer junction photoelectric conversion element further includes a light scattering layer that penetrate a part of the passivation layer and electrically join the second doped layer and the second electrode. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

Provided is a semiconductor element that can generate power with high efficiency and has high durability. A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a second photoactive layer including silicon; a second doped layer; a passivation layer; and a second electrode in this order. The interlayer interface existing between the first photoactive layer and the adjacent layer is a substantially smooth surface, and the multilayer junction photoelectric conversion element further includes a light scattering layer that penetrate a part of the passivation layer and electrically join the second doped layer and the second electrode. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided.

A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.

A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided.

A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.