According to one embodiment, a radiation detector includes first and second resin members, a detection part, a wiring part, and a controller. The first resin member includes first and second partial regions, and a third partial region between the first and second partial regions. The second resin member includes fourth and fifth partial regions. The detection part is provided between the first and fourth partial regions. The detection part includes a first conductive layer, a second conductive layer provided between the first conductive layer and the fourth partial region, and an organic semiconductor layer provided between the first and second conductive layers. The wiring part is provided between the third and fifth partial regions. The wiring part includes first and second wiring layers. The controller is fixed to the second partial region. The controller is electrically connected with the first and second wiring layers.

The present disclosure provides an optical-sensing device, a manufacturing method thereof, and a display panel. The optical-sensing device includes a sensor TFT disposed on a substrate and a switch TFT connected with the sensor TFT. The sensor TFT and the switch TFT include a first active layer and a second active layer, the first active layer comprises a first IGZO layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer.

According to one embodiment, a sensor device includes an insulating base including a meandering strip-shaped portion and an island-shaped portion, a first inorganic insulating film on the island-shaped portion, a first wiring layer on the first inorganic insulating film, a second inorganic insulating film on the first wiring layer, a second wiring layer on the second inorganic insulating film, an organic insulating film on the second wiring layer, a barrier film covering the organic insulating film, a sensor element on the barrier film, and a sealing film covering the sensor element. The barrier film covers side surfaces of the organic insulating film, and the sealing film is in contact with the barrier film and the second inorganic insulating film.

A photodetector comprising an optical waveguide structure comprising at least three stripes spaced from one another such that a slot is present between each two adjacent stripes of the at least three stripes. A graphene absorption layer is provided over or underneath the at least three stripes. There is an electrode for each stripe, over or underneath the graphene absorption layer. The photodetector is configured such that two adjacent electrodes are biased using opposite polarities to create a p-n junction effect in a portion of the graphene absorption layer. In particular the portion of the graphene absorption layer is located over or underneath each respective slot between said each two adjacent stripes.

Provided are a display substrate and a manufacturing method thereof, and a visible light communication apparatus. The display substrate includes a substrate, and the substrate includes a display region and a peripheral region surrounding the display region; the peripheral region includes a visible light signal receiving region surrounding the display region; the display substrate further includes a photosensitive sensing unit, the photosensitive sensing unit is located in the visible light signal receiving region and is configured to receive a visible light signal and convert the visible light signal into an electrical signal to achieve visible light communication.

According to one embodiment, a flexible substrate includes an insulating basement including an island-like portion and a plurality of belt portions, an organic insulating layer, and an electrical element and a projecting portion provided on the organic insulating layer and overlapping the island-like portion. The electrical element includes a common electrode, a first electrode located between the organic insulating layer and the common electrode, and an active layer located between the common electrode and the first electrode. The projecting portion is located on the first electrode and projects in a direction towards the common electrode from the first electrode.

A light detecting device is provided, comprising a substrate having a patterned metal layer formed thereon; a dielectric layer formed on the substrate, first pixel element formed on the dielectric layer, and a second pixel element. The dielectric layer at least has a first trench, and the first trench is positioned below the level of the first pixel element. The second pixel element comprises a buried portion formed correspondingly to the first trench, and an upper portion formed on the buried portion. The upper portion of the second pixel element is positioned at the same level of the first pixel element.

According to one embodiment, a radiation detector includes first and second resin members, a detection part, a wiring part, and a controller. The first resin member includes first and second partial regions, and a third partial region between the first and second partial regions. The second resin member includes fourth and fifth partial regions. The detection part is provided between the first and fourth partial regions. The detection part includes a first conductive layer, a second conductive layer provided between the first conductive layer and the fourth partial region, and an organic semiconductor layer provided between the first and second conductive layers. The wiring part is provided between the third and fifth partial regions. The wiring part includes first and second wiring layers. The controller is fixed to the second partial region. The controller is electrically connected with the first and second wiring layers.

Composite materials comprising electrically conductive particles in a form-stable phase change materials (PCMs) are provided. Also provided as radiation sensors incorporating the composites and methods for detecting radiation using the composites. The PCMs comprise crosslinked polyether polyol that undergoes a reversible solid-solid phase change upon heating. Prior to the phase change, the crosslinked polyether polyol comprises microscopic crystalline domains. When the PCM is heated beyond its phase transition temperature these microscopic crystalline domains melt. However, the form-stable PCMs retain their solid form at the macroscopic level.

The invention relates to a device for detecting electromagnetic radiation, said device comprising at least one row of photoresistors (45), each photoresistor comprising an active portion comprising organic semiconductor materials.