Provided are an organic photodetector and an electronic apparatus including the same. The organic photodetector includes a first electrode, a second electrode facing the first electrode, an auxiliary layer arranged between the first electrode and the second electrode, and an activation layer arranged between the first electrode and the activation layer. The auxiliary layer includes a compound having a refractive index of about 2.2 or more.

A display device including: a display layer including a light emitting device, a photo-detector, and a dummy device; and a circuit layer including a pixel driving part, which is connected to the light emitting device, and a sensor driving part which is connected to the photo-detector, wherein the light emitting device and the dummy device are overlapped with the pixel driving part, and wherein the photo-detector is overlapped with the sensor driving part.

An electronic device including: a base layer; a display element layer disposed on the base layer and including a pixel defining layer that includes an opening, and a light emitting element and a light receiving element, which are separated by the pixel defining layer; and an input sensing layer disposed on the display element layer, wherein each of the light emitting element and the light receiving element includes: a first electrode; a hole transport region disposed on the first electrode; an electron transport region disposed on the hole transport region; and a second electrode disposed on the electron transport region, wherein the second electrode is a common layer in the light emitting element and the light receiving element, the light emitting element comprises a light emitting layer disposed between the hole transport region and the electron transport region, and the light receiving element comprises a light receiving layer which is provided between the first electrode and the second electrode and disposed in a layer different from the light emitting layer in a thickness direction of the electronic device.

A compound represented by Chemical Formula 1, and near-infrared absorbing/blocking films, photoelectric devices, organic sensors, and electronic devices including the compound are provided:

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wherein, in Chemical Formula 1, X.sup.1 to X.sup.4, and R.sup.1 to R.sup.9 are the same as defined in the detailed description.

An imaging element according to an embodiment of the present disclosure includes a photoelectric conversion layer including an organic photoelectric conversion material, a hole transporting material, and an electron transporting material, in which the electron transporting material includes a fullerene compound monomer and a fullerene compound dimer.

A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor on the substrate and including a photosensitive layer extending at least partially in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include separate, respective portions of each of first and second common auxiliary layers each extending continuously as a single piece of material under and on, respectively, each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a light absorbing semiconductor having a HOMO energy level having a difference of less than about 1.0 eV from a HOMO energy level of the first common auxiliary layer and a LUMO energy level having a difference of less than about 1.0 eV from a LUMO energy level of the second common auxiliary layer.

An optical sensor includes: a lower substrate; a plurality of lower electrodes on the lower substrate; an organic photoelectric conversion layer that is provided in common on the plurality of lower electrodes and includes a hole transport layer, an active layer, and an electron transport layer in this order from the lower substrate side; a conductive adhesive that is provided between each of the plurality of lower electrodes and the organic photoelectric conversion layer and electrically connects each of the plurality of lower electrodes to the organic photoelectric conversion layer; a light-transmitting upper electrode provided on the organic photoelectric conversion layer; and a light-transmitting upper substrate provided on the upper electrode.

A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

A display device includes: a display layer including a plurality of light emitting areas, and a plurality of sensing areas; and a sensor layer on the display layer, and including: a first sensing electrode including: a plurality of sensing patterns; and a connection pattern connected to the plurality of sensing patterns; and a second sensing electrode. Each of the plurality of sensing patterns includes: a first-first line extending in a first direction; and a second-first line extending in a second direction crossing the first direction. At least one of the connection pattern or the second sensing electrode includes a cross line extending in a direction different from the first and second directions.

An organic/inorganic composite structure includes a silicon substrate and a conductive polymer layer. The silicon substrate includes a plurality of microstructures disposed on a surface of the silicon substrate. The conductive polymer layer is disposed on the plurality of microstructures. A spaced distance is between the conductive polymer layer and the surface of the silicon substrate.