The invention relates to an organic electroluminescent device comprising a light-emitting layer B comprising a host material H.sup.B, a thermally activated delayed fluorescence (TADF) material E.sup.B, and a depopulation agent S.sup.B.

A display device includes: a substrate configured to contain an organic material; a first underlying film provided above the substrate; a thin film transistor provided above the first underlying film; a semiconductor film included in the thin film transistor and configured to have a channel region; and an electric field inhibition film provided between the first underlying film and the semiconductor film and configured to overlap the channel region in a plan view. The electric field inhibition film has a higher permittivity than the first underlying film.

A electroluminescence display device includes a pixel including a selection transistor, a driving transistor, and an EL element, a scanning signal line electrically connected with a gate of the selection transistor, a data signal line electrically connected with a source of the selection transistor, and a carrier injection amount control signal line applying a voltage to the EL element. The EL element includes a first electrode, a third electrode, a first insulating layer between the first electrode and the third electrode, an electron transfer layer between the first insulating layer and the third electrode, a light emitting layer containing an electroluminescence material between the electron transfer layer and the third electrode, and a second electrode located outer to a region where the first electrode, the first insulating layer, the electron transfer layer and the third electrode overlap each other, the second electrode being in contact with the electron transfer layer.

The invention relates to a an organic electroluminescent device comprising a light-emitting layer B comprising a host material H.sup.B, a first thermally activated delayed fluorescence (TADF) material EB, and an emitter material S.sup.B.

A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.

The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to electronic devices which comprise these compounds. ##STR00001##

An organic light emitting diode includes an anode, an emission layer disposed on the anode and including a host, a phosphorescent dopant represented by Chemical Formula 1 and a fluorescent dopant represented by Chemical Formula 2, and a cathode disposed on the emission layer formed by mixing the fluorescent dopant with the phosphorescent dopant bonded to an acceptor at a specific site, thereby energy loss during an emission process can be minimized and energy transfer efficiency can be improved, and an organic light emitting diode with improved luminous efficiency and an organic light emitting display device having the same can be provided.

An organic light emitting diode includes an anode, an emission layer disposed on the anode and including a host, a phosphorescent dopant represented by Chemical Formula 1 and a fluorescent dopant represented by Chemical Formula 2, and a cathode disposed on the emission layer formed by mixing the fluorescent dopant with the phosphorescent dopant bonded to an acceptor at a specific site, thereby energy loss during an emission process can be minimized and energy transfer efficiency can be improved, and an organic light emitting diode with improved luminous efficiency and an organic light emitting display device having the same can be provided.

A nanotube polariton quantum dot photon source device includes a substrate. A nanotube is arranged on the substrate, and an incident light source is configured to generate an exciton-plasmon polariton excitation in the nanotube. The nanotube emits a photon in response to the generated exciton plasmon polariton excitation. The nanotube has a length L < 50 nm to emit one or more photons at a desired frequency.

Described herein are solid-state devices based on graphene in a Field Effect Transistor (FET) structure that emits high frequency Electromagnetic (EM) radiation using one or more DC electric fields and periodic magnetic arrays or periodic nanostructures. A number of devices are described that are capable of generating and emitting electromagnetic radiation.