H10K59/126

DISPLAY PANEL AND DISPLAY APPARATUS
20230047606 · 2023-02-16 ·

A display panel and a display apparatus are provided. The display panel comprises a substrate of crystalline silicon, a display area and a non-display area on the substrate; a plurality of organic light-emitting elements with white light-emitting overlapping the display area, wherein the organic light-emitting element comprises a first electrode layer, a light-emitting function layer, and a second electrode layer that are sequentially stacked in a direction away from the substrate; wherein the first electrode layer comprises a plurality of independent first electrodes, each second electrode comprises at least one striped opening, and vertical projections of the striped openings on the display area overlap at least 75% of vertical projections of the scan lines on the display area.

DISPLAY PANEL
20230049290 · 2023-02-16 ·

Provided is a display device having defined therein an opening corresponding to a boundary region, and including a plurality of insulating layers disposed on a base layer, an organic layer disposed in the opening, a first connection electrode disposed on the uppermost insulating layer among the plurality of insulating layers, connected to a first signal line through a first contact hole passing through the organic layer, and connected to a transistor through a second contact hole passing through corresponding insulating layers among the plurality of insulating layers, and a second signal line disposed on a layer different from a layer on which the first line is disposed.

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
20230052920 · 2023-02-16 ·

A display apparatus includes: a substrate; a first semiconductor layer disposed over the substrate; a first insulating layer disposed on the first semiconductor layer; a second insulating layer disposed on the first insulating layer; a first oxide material layer disposed between the substrate and the second insulating layer; and a first conductive layer disposed on the second insulating layer and electrically connected to the first semiconductor layer through a first contact hole defined in the first insulating layer, the second insulating layer, and the first oxide material layer.

DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
20230052154 · 2023-02-16 ·

A display substrate, a method for manufacturing the same, and a display device are provided, belonging to the technical field of display. The display substrate includes: a base substrate; a thin film transistor on the base substrate, the thin film transistor including an active layer and a gate electrode on one side of the active layer away from the base substrate, an orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the active layer on the base substrate; and a conductive pattern arranged on a layer different from the gate electrode, the conductive pattern and the gate electrode being separated by an insulating layer, the orthographic projection of the gate electrode on the base substrate at least partially overlapping with an orthographic projection of the conductive pattern on the base substrate. The technical solution of the present disclosure can improve the yield of OLED display substrates.

LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

A light emitting display device includes a substrate, an organic layer, a conductor, an anode, and a pixel definition layer. The organic layer overlaps the substrate and has a connection opening. The conductor is positioned between the substrate and the organic layer. The anode is positioned on the organic layer and is partially positioned inside the connection opening. The pixel definition layer exposes an exposed portion of the anode. The organic layer has a halftone exposure portion and a neighboring portion. The halftone exposure portion overlaps the exposed portion of the anode and overlaps the conductor. The neighboring portion neighbors the halftone exposure portion. A face of the halftone exposure portion and a face of the neighboring portion are spaced from the substrate by a first distance and a second distance, respectively. A difference between the first distance and the second distance is 30 nm or less.

ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

An array substrate and a manufacturing method thereof, a display device and a manufacturing method thereof are provided, which belong to the technical field of display. The array substrate includes: an interposer substrate, a fan-out region and a thin-film transistor disposed on one side of the interposer substrate, and a bonding connection line disposed on the other side of the interposer substrate. The bonding connection line includes a first lead and a second lead that are insulated from each other. The interposer substrate is provided with a first interposer via hole and a second interposer via hole. The first lead is electrically connected to the thin-film transistor by a conductive structure in the first interposer via hole and the fan-out region, and the second lead is electrically connected to the thin-film transistor by a conductive structure in the second interposer via hole and the fan-out region.

DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

A display device includes a light emitting element including an anode, a cathode, and a light emitting layer between the anode and the cathode, a first transistor connected between the anode and a first power line, the first transistor may be switched by a voltage of a node, a second transistor connected between the first transistor and a data line, the second transistor may be switched by a write scan signal, a third transistor connected between the node and the anode, the third transistor may be switched by a compensation scan signal, a fourth transistor connected between the node and an initialization line, the fourth transistor may be switched by an initialization scan signal, an insulating layer on the first to the fourth transistors, and a light blocking pattern protruding from the insulating layer, the light blocking pattern being adjacent to the third transistor and the fourth transistor.

DISPLAY DEVICE AND SENSING SYSTEM INCLUDING THE SAME

A display device is disclosed that includes a plurality of pixels and a plurality of code pixels. The pixels include light-emitting elements, which display an image. The code pixels are disposed in the same layer as the pixels and are adjacent to a reference point disposed between the pixels. The code pixels include infrared light-emitting elements, which emit infrared light. At least one of the code pixels, disposed in a particular direction from the reference point, emit the infrared light to provide a code pattern having position information.

DISPLAY DEVICE AND SENSING SYSTEM INCLUDING THE SAME

Provided is a display device comprising a first substrate, a thin film transistor layer disposed on the first substrate and including a plurality of thin film transistors, a pixel defining layer disposed on the thin film transistor layer and defining a plurality of emission areas, a pixel electrode disposed in each of the emission areas on the thin film transistor layer, a plurality of spacers disposed on the pixel defining layer and distinguished from the pixel defining layer and the pixel electrode with respect to light of a specific wavelength, a touch electrode disposed on the plurality of spacers and configured to receive an input from an outside, and a code pattern having position information determined by a planar shape of each of the plurality of spacers.

DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

A display device and a method of fabricating the same, the display device including a light-blocking layer disposed on a substrate, a buffer layer disposed on the light-blocking layer, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed on the semiconductor layer, a connection pattern layer and a gate electrode disposed on the gate insulating layer and spaced apart from each other, an interlayer dielectric layer disposed on the connection pattern layer and the gate electrode, a via layer disposed on the interlayer dielectric layer, a first bridge layer and a second bridge layer disposed on the via layer, a pixel electrode disposed on the second bridge layer, and a light-emitting layer disposed on the pixel electrode. An end of the first bridge layer is connected to the light-blocking layer through the connection pattern layer, and another end thereof is connected to the semiconductor layer. The second bridge layer connects the semiconductor layer with the pixel electrode.