A light emitting thin film and a manufacturing method thereof, a light emitting device and a displaying substrate, which relates to the technical field of displaying. The light emitting thin film includes a polymer (1) and a quantum dot (2) bonded to the polymer (1); the quantum dot (2) includes a metal nanoparticle (3) and a core-shell structure connected to the metal nanoparticle (3); and the metal nanoparticle (3) is bonded to the polymer (1) by a sulfide bond.

A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.

Photonic devices are provided comprising a photoactive layer and at least one additional layer, wherein a surface of the photoactive layer or a surface of the at least one additional layer has imprinted thereon a quasi-random pattern of nanostructures corresponding to a quasi-random pattern of nanostructures defined in a recording layer of a pre-written optical media disc. Methods of patterning a layer of a photonic device are also provided.

A method of patterning a substrate includes applying a first potential to a spray nozzle, applying a second potential to at least one first cell electrode among a plurality of cell electrodes on a first surface of the substrate, applying a third potential to at least one second cell electrode excluding the at least one first cell electrode among the cell electrodes, and applying a fourth potential to a second surface that is opposite to the first surface of the substrate.

A flattening device, a display substrate and a method for manufacturing the display substrate are provided. The method includes providing a base substrate, forming a pixel definition layer on the base substrate and forming an uncured sub-pixel material in a plurality of sub-pixel regions defined by the pixel definition layer, and flattening the uncured sub-pixel material by a flattening device. The flattening device includes a main body and a plurality of protrusions on a surface of the main body. A size of a protrusion surface of each protrusion facing away from the main body is not greater than that of each sub-pixel region. The sub-pixels are flattened by using the flattening device, so a sub-pixel material layer with a flat surface may be obtained, which improves the structure of the sub-pixels and improves the display performance of the display substrate.

Disclosed are a method of manufacturing a microstructure array that includes preparing a mold having a concave micro pattern array in which a plurality of concave micro patterns are arranged, preparing a perovskite precursor solution including a perovskite precursor and a hydrophilic polymer, coating the perovskite precursor solution on a substrate, disposing the mold on the perovskite precursor solution to confine the perovskite precursor solution in the plurality of concave micro patterns, obtaining a composite of perovskite nanocrystals and the hydrophilic polymer from the perovskite precursor solution in the plurality of concave micro patterns, and, and removing the mold to form a microstructure array in which a plurality of microstructures including a composite of the perovskite nanocrystals and the hydrophilic polymer are arranged, a microstructure array, a micro light emitting diode including the same, and a manufacturing method thereof, and a display device.

According to one embodiment, a manufacturing method is to manufacture a display device in which a partition including a lower portion and an upper portion arranged on the lower portion to protrude from a side surface of the lower portion is arranged on a boundary between adjacent sub-pixels, and the method comprises forming a metal layer above a substrate, forming the upper portion on the metal layer, reducing a thickness of a first portion of the metal layer exposed from the upper portion by anisotropic etching, and forming the lower portion by reducing a width of a second portion of the metal layer located under the upper portion by isotropic etching.

According to one embodiment, a display device manufacturing method includes preparing a processing substrate including a lower electrode, a rib including and a partition, forming a first organic layer covering the lower electrode, and a second organic layer located on the upper portion, forming a first upper electrode located on the first organic layer and a second upper electrode located on the second organic layer, forming a sealing layer, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask to reduce a thickness of the sealing layer exposed from the resist, and performing isotropic dry etching using the resist as a mask and using a mixture gas of fluorine-based gas and oxygen to remove the sealing layer exposed from the resist.

A photoelectric conversion element includes a base, a first electrode on or above the base, an electron-transporting layer on or above the first electrode, a photoelectric conversion layer on or above the electron-transporting layer, a hole-transporting layer on or above the photoelectric conversion layer, and a second electrode on or above the hole-transporting layer. The photoelectric conversion element has a penetration portion penetrating the electron-transporting layer and the photoelectric conversion layer. The photoelectric conversion element includes, in the penetration portion, a material of the hole-transporting layer and a material of the second electrode.

A photoelectric conversion element includes a base, a first electrode on or above the base, an electron-transporting layer on or above the first electrode, a photoelectric conversion layer on or above the electron-transporting layer, a hole-transporting layer on or above the photoelectric conversion layer, and a second electrode on or above the hole-transporting layer. The photoelectric conversion element has a penetration portion penetrating the electron-transporting layer and the photoelectric conversion layer. The photoelectric conversion element includes, in the penetration portion, a material of the hole-transporting layer and a material of the second electrode.