A perovskite thin film and method of forming a perovskite thin film are provided. The perovskite thin film includes a substrate, a hole blocking/electron transport layer, and a sintered perovskite layer. The method of forming the perovskite solar cell includes depositing a perovskite layer onto a substrate and sintering the perovskite layer with intense pulsed light.

A method of making a perovskite layer includes providing a flexible substrate; providing a perovskite solution comprising an initial amount of solvent and perovskite precursor materials and a total solids concentration between 30 percent and 70 percent by weight of its saturation concentration; depositing the perovskite solution on the substrate; removing a first portion of the solvent from the deposited perovskite solution and increasing the total solids concentration of the perovskite solution to at least 75 percent of its saturation concentration with a first drying step; and removing a second portion of the solvent from the deposited perovskite solution with a second drying step having a higher rate of solvent evaporation that causes saturation and a conversion reaction in the deposited perovskite solution resulting in perovskite crystal formation or formation of a perovskite intermediate phase, wherein the first drying step dwell time is at least 5 times longer than the second drying step dwell time. A continuous inline method for production of photovoltaic devices at high speed, and a perovskite solution for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices are also described.

A light-emitting device and a manufacturing method thereof are disclosed. The manufacturing method of the light-emitting device includes: forming a function layer that has a first surface; performing plasma treatment on the first surface of the function layer; and forming a perovskite-type light-emitting layer on the first surface treated by the plasma treatment.

In EL display panels fabricated by vapor deposition, a vapor-deposition fine mask is employed to form red, green, and blue pixels. An issue, however, has been that misregistration of the vapor-deposition fine mask occurs, lowering manufacturing yields. To resolve this issue, on a thin-film transistor (TFT) substrate, red, green, and blue pixel electrodes are fashioned in matrix form. The TFT substrate is conveyed into a vapor-deposition chamber. Under a vacuum, an organic evaporation source is employed to codeposit a light-emitting layer composed of a host material and a red guest material on the TFT substrate display screen. An ultraviolet laser beam generated by a laser device is optically guided into the vapor-deposition chamber through a laser window and directed on the light-emitting layer formed onto the green and blue pixel electrodes. Positional selecting on the green and blue pixels is carried out by controlling a mirror galvanometer.

A light-emitting device and a manufacturing method thereof are disclosed. The manufacturing method of the light-emitting device includes: forming a function layer that has a first surface; performing plasma treatment on the first surface of the function layer; and forming a perovskite-type light-emitting layer on the first surface treated by the plasma treatment.

A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.

An apparatus for manufacturing a display apparatus includes a movable portion to which a display substrate including a pattern part is attached, wherein the pattern part includes a dummy electrode and an organic functional layer covering the dummy electrode, a processor configured to cause a laser to irradiate the display substrate in a first irradiating process, a measurement unit configured to measure the display substrate to which the laser has irradiated in the first irradiating process, and a controller configured to receive data measured by the measurement unit and control the processor to cause the laser to irradiate the laser in a second irradiating process using at least one different parameter than what was used in the first irradiating process.

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

A method for manufacturing a light-emitting device includes forming on a substrate, a first electrode, and forming a quantum dot layer. The forming the quantum dot layer includes performing first application involves applying a first solution on a position overlapping with the substrate; performing first light irradiation involves irradiating with light the position where the first solution is applied, to melt the ligand and vaporize the first solvent, performing second light irradiation involves irradiating the position with light to raise a temperature of the quantum dot; and performing third light irradiation involves irradiating the position with light to cause the first inorganic precursor to epitaxially grow around the first shell so as to form a second shell with which the first shell is coated. In the performing third light irradiation, at least one set of the quantum dots adjacent to each other is connected to each other via the second shell.

A device includes: (1) a substrate; (2) a patterning coating covering at least a portion of the substrate, the patterning coating including a first region and a second region; and (3) a conductive coating covering the second region of the patterning coating, wherein the first region has a first initial sticking probability for a material of the conductive coating, the second region has a second initial sticking probability for the material of the conductive coating, and the second initial sticking probability is different from the first initial sticking probability.