A display device includes a pixel electrode disposed on a substrate and including a reflective electrode layer and an upper electrode layer, a contact electrode disposed on the pixel electrode, light-emitting elements disposed on the contact electrode and disposed perpendicular to the pixel electrode, a planarization layer disposed on the pixel electrode, the planarization layer filling a space between the light-emitting elements, and a common electrode disposed on the planarization layer and the light-emitting elements, and a size of the contact electrode is equal to a size of each of the light-emitting elements in a plan view, and the upper electrode layer is disposed on the reflective electrode layer and is in a polycrystalline phase.

An opto-electronic device includes: (1) a substrate including a first region and a second region; and (2) a conductive coating covering the second region of the substrate. The first region of the substrate is exposed from the conductive coating, and an edge the conductive coating adjacent to the first region of the substrate has a contact angle that is greater than about 20 degrees.

A display substrate includes a base; and a first display region and a second display region disposed on the base, where a light transmittance of the first display region is greater than a light transmittance of the second display region, and the first display region includes one or more first sub-regions and one or more second sub-regions; where the one or more first sub-regions include a plurality of first sub-pixels, and each of the first sub-pixels includes a first electrode disposed on the base, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer. A display panel, a display device and a method of manufacturing a display substrate are further disclosed.

The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.

Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of: a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips; b) depositing a conductive layer (5) across said zones; c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b); d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b); e) etching said conductive layer (5) in said exposed areas; f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.

The present disclosure provides a light emitting diode, a method of preparing the same, and a display device. The light emitting diode includes an anode, a quantum dot light emitting layer, an electron transport layer, a cathode, and a transition layer located between the electron transport layer and the cathode, the cathode including a transparent conductive oxide material, and a material of the transition layer having a work function W.sub.F between an LUMO of a material of the electron transport layer and a work function W.sub.F of a material of the cathode.

The present disclosure provides a light emitting diode, a method of preparing the same, and a display device. The light emitting diode includes an anode, a quantum dot light emitting layer, an electron transport layer, a cathode, and a transition layer located between the electron transport layer and the cathode, the cathode including a transparent conductive oxide material, and a material of the transition layer having a work function W.sub.F between an LUMO of a material of the electron transport layer and a work function W.sub.F of a material of the cathode.

According to one embodiment, a display device manufacturing method includes preparing a processing substrate including a lower electrode, a rib including and a partition, forming a first organic layer covering the lower electrode, and a second organic layer located on the upper portion, forming a first upper electrode located on the first organic layer and a second upper electrode located on the second organic layer, forming a sealing layer, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask to reduce a thickness of the sealing layer exposed from the resist, and performing isotropic dry etching using the resist as a mask and using a mixture gas of fluorine-based gas and oxygen to remove the sealing layer exposed from the resist.

According to one embodiment, a display device manufacturing method includes preparing a processing substrate including a lower electrode, a rib including and a partition, forming a first organic layer covering the lower electrode, and a second organic layer located on the upper portion, forming a first upper electrode located on the first organic layer and a second upper electrode located on the second organic layer, forming a sealing layer, forming a resist covering a part of the sealing layer, performing anisotropic dry etching using the resist as a mask to reduce a thickness of the sealing layer exposed from the resist, and performing isotropic dry etching using the resist as a mask and using a mixture gas of fluorine-based gas and oxygen to remove the sealing layer exposed from the resist.

A photoelectric conversion panel includes a TFT, a photodiode disposed at an upper layer than the TFT, a first organic film formed at an upper layer than the photodiode, a first inorganic insulating film covering at least a part of the first organic film, and a second organic film covering at least a part of the first inorganic insulating film. The first inorganic insulating film includes a first hole portion connecting the first organic film and the second organic film, and a first moisture-proof portion at least a part of which is disposed at a side of the photodiode with respect to the first hole portion. The first moisture-proof portion penetrates the first organic film.