A display device includes: a substrate including a display area and a folding area positioned in a portion of the display area; a display structure disposed on the substrate; a protection film disposed on the substrate and overlapping the folding area; an adhesive member disposed between the protection film and the substrate, wherein the protection film adheres to the substrate by the adhesive member; a first antistatic layer disposed between the protection film and the adhesive member, wherein the first antistatic layer includes a first compound; a second antistatic layer disposed on a bottom surface of the protection film, wherein the second antistatic layer includes a second compound; and a supporting member disposed on the second antistatic layer, wherein the supporting member includes an opening overlapping the folding area.

The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to organic electroluminescent devices which comprise these compounds.

A display panel and a method of fabricating the same are provided. The display panel includes: a base substrate; a first electrode disposed on the base substrate; a hole injection layer disposed on the first electrode, wherein a surface of the hole injection layer away from the first electrode is scattering surface. In the present invention, the surface of the hole injection layer away from the first electrode is set as the scattering surface, and changes of brightness and chromaticity caused by a change of viewing angles is weakened by the scattering surface, thereby expanding viewing angles of the display panel.

Method of making a current collecting grid for solar cells, including the steps of a) providing a continuous layer stack (1) on a substrate (8), the layer stack (1) including an upper (2) and a lower (3) conductive layer having a photoactive layer (4) interposed there between; b) selectively removing the upper conductive layer (2) and the photoactive layer (4) for obtaining a first contact hole (10) extending through the upper conductive layer (2) and photoactive layer (4) exposing the lower conductive layer (3); c) printing a front contact body (4) on the upper conductive layer (2) and a back contact body (5) in the first contact hole (10) on the lower conductive layer (3) and forming an electrically insulating first gap surrounding the back contact body (5) between the upper conductive layer (2) and the back contact body (2).

The disclosure relates to a quantum dot light-emitting diode and a fabricating method thereof. The quantum dot light-emitting diode includes a quantum dot layer and an electron transport layer formed on the quantum dot layer. A surface of a side of the quantum dot layer close to the electron transport layer bonds to an ester substance.

Hybrid organic-inorganic perovskite thin films with average grain sizes of at least 50 micrometers were prepared and employed in solar cells. The PCE values of the solar cells did not degrade with the direction or the scan-rate of the applied voltage. The larger average grain sizes are believed to assist in reducing the influence of defect states on carrier recombination. The tunability of PCE with substrate temperature may be correlated to the quality of the crystalline perovskite formed using the hot-casting procedure. The larger average grain sizes lead to good crystalline quality, low defect density, and high carrier mobility. The process for growing hybrid organic-inorganic perovskites may be applicable to the preparation of other materials to overcome problems related to polydispersity, defect formation, and grain boundary recombination.

The present invention relates to formulations comprising at least one organic semiconductor and at least one organic solvent, characterized in that the formulation contains less than 10,000 particles per liter formulation having an average size in the range from 0.1 to 20 μm, to their use for the preparation of electronic devices, to methods for preparing electronic devices using the formulations of the present invention, and to electronic devices prepared from such methods and formulations.

Disclosed are a method of manufacturing a microstructure array that includes preparing a mold having a concave micro pattern array in which a plurality of concave micro patterns are arranged, preparing a perovskite precursor solution including a perovskite precursor and a hydrophilic polymer, coating the perovskite precursor solution on a substrate, disposing the mold on the perovskite precursor solution to confine the perovskite precursor solution in the plurality of concave micro patterns, obtaining a composite of perovskite nanocrystals and the hydrophilic polymer from the perovskite precursor solution in the plurality of concave micro patterns, and, and removing the mold to form a microstructure array in which a plurality of microstructures including a composite of the perovskite nanocrystals and the hydrophilic polymer are arranged, a microstructure array, a micro light emitting diode including the same, and a manufacturing method thereof, and a display device.

The invention relates to a photovoltaic module comprising a glass substrate or a substrate made of polymer material and at least two photovoltaic cells, a first photovoltaic cell and a second photovoltaic cell, on said substrate.

A solar cell includes a first substrate, a first hole transport layer, a first photoelectric conversion layer containing a perovskite compound, and a second photoelectric conversion layer containing a photoelectric conversion material in this order. A band gap of the perovskite compound is greater than a band gap of the photoelectric conversion material. With respect to an absorption wavelength of the first photoelectric conversion layer 3, a refractive index n.sub.A of the first hole transport layer 2 satisfies refractive index of the first substrate≤n.sub.A≤refractive index of the first photoelectric conversion layer. Further, with respect to a transmission wavelength of the first photoelectric conversion layer 3 and an absorption wavelength of the second photoelectric conversion layer 5, a refractive index n.sub.B of the first hole transport layer 2 satisfies refractive index of the first substrate≤n.sub.B≤refractive index of the first photoelectric conversion layer.