A light-emitting device includes an HTL including a metal chalcogenide between an anode and an EML, with an IL including an organic material at least between the HTL and the EML. A distance between the HTL and the EML in a light-emitting element that emits light in a wavelength band having the shortest light emission peak wavelength is greater than a distance between the HTL and the EML in each of the other light-emitting elements.

A quantum dot film, a method for preparing the same, and a quantum dot light emitting diode are provided. The method for preparing the quantum dot film includes: providing a substrate; and depositing a mixed solution containing a quantum dot and a high molecular polymer onto the substrate, and performing annealing treatment to obtain the quantum dot film. A temperature of the annealing treatment is greater than or equal to a glass transition temperature of the high molecular polymer. The preparation method can make the position of the quantum dot in the quantum dot film rearranged, such that the quantum dot is tightly accumulated and regularly arranged in the high molecular polymer, whereby forming a flat quantum dot film. The quantum dot film obtained from the preparation method, when applied to the quantum dot light emitting device, can significantly improve the electro-optical efficiency and lifespan of the device.

A composition, an interlayer manufactured therefrom, and an apparatus including the interlayer are provided. The composition includes a polymer compound represented by Formula 1, a non-arylamine-based compound represented by Formula 2, and a solvent: ##STR00001##
Z.sub.o.  <Formula 2> The substituents in Formulae 1 and 2 may be understood as described in connection with the detailed description.

The present invention discloses a light-emitting electrochemical cell, which includes a first electrode, a light-emitting layer, and a second electrode which are stacked, wherein the light-emitting layer includes a light-emitting material and an ion conductive polymer. The present invention also discloses an electroluminescent display device, including a glass substrate, a thin film transistor, a light-emitting electrochemical cell, a protective layer, and a polarizer. Embodiments of the present application provide a light-emitting electrochemical cell and an electroluminescence display device, wherein the electro-luminescence display device is construed by providing a simple structure and manufacturing process to the light-emitting electrochemical cell, and therefore the manufacturing cost is reduced, and the production efficiency is improved.

An electroluminescent device and a display device including the device are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer, the emission layer including quantum dots; a self-assembled monomolecular layer disposed on the emission layer, the self-assembled monomolecular layer including self-assembled monomolecules; an electron transport layer disposed on the self-assembled monomolecular layer; and a second electrode disposed on the electron transport layer.

A photoelectric conversion element includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer. The first electrode layer includes a first base member, and a rough layer formed on the first base member. The photoelectric conversion layer is formed on the rough layer, and the second electrode layer is formed above the photoelectric conversion layer. The rough layer includes a plurality of metal fine particles irregularly connected together and to a surface of the first base member, and the photoelectric conversion layer infiltrates among the plurality of metal fine particles constituting the rough layer.

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

A display device includes a substrate, a thin film transistor provided on the substrate, a first electrode connected to the thin film transistor, a second electrode overlapping the first electrode, and a partition wall and a light-emitting device layer provided between the first electrode and the second electrode. The partition wall may include a main chain and a side chain connected to the main chain, and a carbon number of the side chain may be equal to or greater than 14.

A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.