Provided is a light-emitting diode and a method for preparing the same. The light-emitting diode includes an anode, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a cathode stacked in sequence, in which the perovskite light-emitting layer includes a first sublayer and a second sublayer stacked in sequence, with a material for forming the first sublayer including an inorganic perovskite material, and with a material for forming the second sublayer being an organic perovskite material.

The present specification relates to an organic light emitting device.

The present disclosure provides an organic light emitting device comprising a hole injection layer including a cured product of a compound represented by the following Chemical Formula 1, and a hole transport layer including a polymer containing a repeating unit represented by the following Chemical Formula 2:

##STR00001## wherein all the variables a10-re described herein.

A composite quantum-dot optical film comprises a quantum-dot layer and a composite structure disposed on the quantum-dot layer, wherein the composite structure comprises a first substrate, a second substrate, and a first barrier layer, wherein each of the first substrate and the second substrate comprises a polymer material, wherein the barrier layer being made of organic material and capable of being water-resistant is disposed between the first substrate and the second substrate.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

Hybrid organic-inorganic perovskite thin films with average grain sizes of at least 50 micrometers were prepared and employed in solar cells. The PCE values of the solar cells did not degrade with the direction or the scan-rate of the applied voltage. The larger average grain sizes are believed to assist in reducing the influence of defect states on carrier recombination. The tunability of PCE with substrate temperature may be correlated to the quality of the crystalline perovskite formed using the hot-casting procedure. The larger average grain sizes lead to good crystalline quality, low defect density, and high carrier mobility. The process for growing hybrid organic-inorganic perovskites may be applicable to the preparation of other materials to overcome problems related to polydispersity, defect formation, and grain boundary recombination.

An apparatus comprising: a module; a substrate; and electrolyte between the module and the substrate, wherein an electronic component is formed between the module and the substrate and wherein the electrolyte is configured to function as the electrolyte in the electronic component and also as the adhesive to attach the module to the substrate.

The present invention relates to formulations comprising at least one organic semiconductor and at least one organic solvent, characterized in that the formulation contains less than 10,000 particles per liter formulation having an average size in the range from 0.1 to 20 μm, to their use for the preparation of electronic devices, to methods for preparing electronic devices using the formulations of the present invention, and to electronic devices prepared from such methods and formulations.

The invention relates to a process for the production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular in memory elements of the ReRAM type. The present invention furthermore relates to compounds for the production of the molecular layer and to memory elements comprising the molecular layer.

Disclosed are a method of manufacturing a microstructure array that includes preparing a mold having a concave micro pattern array in which a plurality of concave micro patterns are arranged, preparing a perovskite precursor solution including a perovskite precursor and a hydrophilic polymer, coating the perovskite precursor solution on a substrate, disposing the mold on the perovskite precursor solution to confine the perovskite precursor solution in the plurality of concave micro patterns, obtaining a composite of perovskite nanocrystals and the hydrophilic polymer from the perovskite precursor solution in the plurality of concave micro patterns, and, and removing the mold to form a microstructure array in which a plurality of microstructures including a composite of the perovskite nanocrystals and the hydrophilic polymer are arranged, a microstructure array, a micro light emitting diode including the same, and a manufacturing method thereof, and a display device.