This composition for a hole collecting layer of an organic photoelectric conversion element contains: a charge-transporting substance comprising a polyaniline derivative represented by formula (1); a fluorine-based surfactant; and a solvent. The composition provides a thin film suitable for a hole collecting layer of an organic photoelectric conversion element, and is particularly suited for producing an inverse lamination type organic photoelectric conversion element. ##STR00001##
(In the formula, R.sup.1 to R.sup.6 each independently represent a hydrogen atom, etc., but one of R.sup.1 to R.sup.4 is a sulfonic acid group, one or more of the remaining R.sup.1 to R.sup.4 are a C1-20 alkoxy group, a C1-20 thioalkoxy group, a C1-20 alkyl group, a C2-20 alkenyl group, a C2-20 alkynyl group, a C1-20 haloalkyl group, a C6-20 aryl group, or a C7-20 aralkyl group, and m and n are numbers which satisfy 0≤m≤1, 0≤n≤1 and m+n=1).

An organic photodetector including: a substrate; a first electrode arranged on the substrate; a second electrode arranged on the substrate and apart from the first electrode in a first direction crossing a direction perpendicular to the substrate; and an active layer covering the first electrode and the second electrode.

An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

A solar cell device is presented. The solar cell device comprises a layered structure comprising an electron transport layer and a hole transport layer and a heterojunction interface region between the electron transport and hole transport layers configured to define at least one charge generation region forming at least one junction between them, wherein at least one of the electron transport layer and the hole transport layer comprises at least one modulated doping layer at a predetermined distance from said at least one junction, said at least one modulated doping layer thereby inducing variation of an energy band structure at a vicinity of said at least one junction generating electric field applied to charge carriers increasing efficiency of generation and/or collection of the charge carriers.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.

Disclosed is a display device configured such that a mixture of a transition metal and an organic material is used as a cathode, whereby the cathode exhibits low resistance, high transmittance, high reliability, and high performance in the state in which the cathode is thin.

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

To provide an n-type dopant capable of providing high charge mobility and controlling the Fermi level. To provide an organic semiconductor layer having high charge mobility, no crystal distortion, no dopant diffusion even at high temperatures, and having a controlled Fermi level. To provide an organic semiconductor devices such as an organic semiconductor solar cells with high power conversion efficiency.

An n-type organic semiconductor layer, in which ionic atom encapsulated fullerene neutral substance is doped in a layer made of fullerene. The n-type semiconductor layer is an electron transport layer. N-type dopant including ionic atom encapsulated fullerene neutral substance doped in an organic semiconductor layer.

A photoelectric conversion element 10A according to an embodiment of the present disclosure includes: a first electrode 21; a second electrode 23 that is disposed to be opposed to the first electrode 21; and a photoelectric conversion layer 22 that is provided between the first electrode 21 and the second electrode 23. The photoelectric conversion layer 22 includes a hole transporting material as a first organic semiconductor material. The hole transporting material absorbs blue light.