High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.

A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

A field-effect transistor comprises, on a substrate, a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; wires individually electrically connected to the source electrode and the drain electrode; and a gate insulating layer that insulates the semiconductor layer from the gate electrode, wherein a connecting portion between the source electrode and the wire forms a continuous phase, and a connecting portion between the drain electrode and the wire forms a continuous phase, the portions constituting the continuous phases contain at least an electrically conductive component and an organic component, and integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the wires are higher than integrated values of optical reflectance at a region of a wavelength of 600 nm or more and 900 nm or less on the source electrode and the drain electrode.

An electronic device material includes: carbon nanotubes having a purity of Semiconductor Carbon Nanotubes of 80% by mass or more; and a n-type semiconductor.

An optoelectronic system can include a single walled carbon nanotube (SWNT) device. The SWNT can include a carrier-doping density with optical conditions that control trion formation that respond via optical, electrical, or magnetic stimuli. The carrier-doping density can include a hole-polaron or electron-polaron concentration.

A composition, which may be in the form of a film, comprises a network of carbon nanotubes. One or more non-conjugated polymer molecules are associated with individual carbon nanotubes or small bundles of carbon nanotubes in the form of polymer-nanotube complexes.

There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.

Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the one or more carbon nanotubes.

A method for forming an organic light emitting diode is provided. A substrate and an evaporating source are provided. A first electrode is formed on a surface of the substrate. The evaporating source is spaced from the first electrode. The carbon nanotube film structure is heated to gasify an organic light emitting material and form an organic light emitting layer on a surface of the first electrode. A second electrode is formed on a surface of the organic light emitting layer.

Composite materials comprising electrically conductive particles in a form-stable phase change materials (PCMs) are provided. Also provided as radiation sensors incorporating the composites and methods for detecting radiation using the composites. The PCMs comprise crosslinked polyether polyol that undergoes a reversible solid-solid phase change upon heating. Prior to the phase change, the crosslinked polyether polyol comprises microscopic crystalline domains. When the PCM is heated beyond its phase transition temperature these microscopic crystalline domains melt. However, the form-stable PCMs retain their solid form at the macroscopic level.