The present specification relates to an organic light emitting device including Compound (A) represented by Chemical Formula 1 and Compound (B) represented by any one of Chemical Formulae 2 to 4.

The present application relates to a nitrogen-containing compound. The structural formula of the nitrogen-containing compound is as shown in a Formula 1, in which a ring A and a ring B are each independently selected from a benzene ring or a fused aromatic ring with 10 to 14 ring-forming carbon atoms, and at least one of the ring A and the ring B is selected from the fused aromatic ring with 10 to 14 ring-forming carbon atoms; L is selected from a single bond, a substituted or unsubstituted arylene group with 6 to 30 carbon atoms, and a substituted or unsubstituted heteroarylene group with 3 to 30 carbon atoms; and Het is a substituted or unsubstituted nitrogen-containing heteroaryl group with 3 to 30 carbon atoms. The nitrogen-containing compound of the present application can improve the luminous efficiency of an organic electroluminescent device and the conversion efficiency of a photoelectric conversion device using the nitrogen-containing compound.

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An organic electroluminescence device includes: an anode; a cathode; and an emitting layer provided between the anode and the cathode, in which the emitting layer contains a delayed fluorescent compound M2 and a compound M3 represented by a formula (3) and a singlet energy S.sub.1(M2) of the compound M2 and a singlet energy S.sub.1(M3) of the compound M3 satisfy a relationship of a numerical formula (Numerical Formula 1) below, S.sub.1(M3)>S.sub.1(M2) . . . (Numerical Formula 1). In the formula (3), A3 is a group represented by a formula (3a) or the like.

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An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

Provided are an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode, and an electronic device comprising the organic electronic element, wherein the organic material layer includes a compound of P-1 to P-16 and Formula 2, therefore the driving voltage of the organic electronic element can be lowered and the luminous efficiency and lifespan can be improved.

A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λ.sub.max1) of the first photoelectric conversion layer and a peak absorption wavelength (λ.sub.max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

The present disclosure relates to a boron compound applicable to an organic light-emitting diode and an organic light-emitting diode comprising same. More specifically, the present disclosure relates to a boron compound represented by any one of Chemical Formulas A to D and an organic light-emitting diode comprising same, wherein Chemical Formulas A to D are as defined in the description.

The present application provides a heterocyclic compound capable of significantly enhancing lifetime, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device comprising the heterocyclic compound in an organic material layer.

A first photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer includes a fullerene C.sub.60 or a fullerene C.sub.70 as a first organic semiconductor material and a second organic semiconductor material having an ionization potential of 0 or more and 5.0 eV or less.

Provided are an organic compound, a P-type doped material and an application thereof. The organic compound has a structure represented by Formula I, and through a molecular structure design, the organic compound has a lowest unoccupied molecular orbital energy level which is close to an anode work function and a highest occupied molecular orbital energy level of a hole transport layer, effectively promoting the generation of holes. The organic compound has a suitable molecular weight, low volatility and high stability, sufficiently satisfying an evaporation preparation process of OLED devices; moreover, the synthesis method is simple and low cost, achieving large-scale application. As an organic electroluminescent material, the organic compound can be used as the P-type doped material, especially suitable for a charge injection layer of organic electroluminescent devices, which can adjust charge balance of devices, effectively improve efficiency and lifetime of devices and reduce drive voltage and energy consumption.