A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.

The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

An electronic component may include a carrier, and a thermoelectric sensor and a power transistor which are arranged on the carrier. The power transistor may include a base layer containing a transistor material chosen from among gallium nitride, aluminium gallium nitride, gallium arsenide, indium gallium, indium gallium nitride, aluminium nitride, indium aluminium nitride, and mixtures thereof. The electronic component may be configured so that the thermoelectric sensor generates an electric current under the effect of heating from the power transistor.

Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.