Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.

Disclosed are a thermoelectric device and a manufacturing mold and manufacturing method thereof. The thermoelectric device includes at least one set of thermoelectric arm unit, wherein a first thermoelectric arm is provided with a first upper surface and a first lower surface opposite to the first upper surface; a second thermoelectric arm is provided with a second upper surface and a second lower surface opposite to the second upper surface; the second thermoelectric arm is seamlessly bonded with the first thermoelectric arm via an insulating adhesive layer; the first upper surface is flush with the second upper surface, and a first spacing groove is formed between adjacent positions of the first upper surface and the second upper surface; the first lower surface is flush with the second lower surface, and a second spacing groove is formed between adjacent positions of the first lower surface and the second lower surface

A system and method are disclosed for internally heated concentrated solar power (CSP) thermal absorbers. The system and method involve an energy-generating device having at least one heating unit. At least one heating unit preheats the energy-generating device in order to expedite the startup time of the energy-generating device, thereby allowing for an increase in efficiency for the production of energy. In some embodiments, the energy-generating device is a CSP thermal absorber. The CSP thermal absorber comprises a housing, a thermal barrier, a light-transparent reservoir containing a liquid alkali metal, at least one alkali metal thermal-to-electric converter (AMTEC) cell, an artery return channel, and at least one heating unit. Each heating unit comprises a heating device and a metal fin. The metal fin is submerged into the liquid alkali metal, thereby allowing the heating device to heat the liquid alkali metal via the fin.

Disclosed is a thermoelectric generator including a heat source contact, a heat sink contact, and a plurality of co-axial fibers. Each of the co-axial fibers include a core and a cladding disposed about the core. The plurality of co-axial fibers extend from the heat source contact to the heat sink contact. Thermoelectric generators are disclosed including hollow core doped silicon carbide fibers and doubly clad PIN junction fibers. Methods for forming direct PN junctions between oppositely doped fibers are additionally disclosed.

Disclosed is a thermoelectric generator including a heat source contact, a heat sink contact, and a plurality of co-axial fibers. Each of the co-axial fibers include a core and a cladding disposed about the core. The plurality of co-axial fibers extend from the heat source contact to the heat sink contact. Thermoelectric generators are disclosed including hollow core doped silicon carbide fibers and doubly clad PIN junction fibers. Methods for forming direct PN junctions between oppositely doped fibers are additionally disclosed.

The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.

Provided is a thermoelectric material having an intermetallic compound in an Al—Fe—Si system as a main component, exhibiting a thermoelectric effect in a temperature range from a room temperature to 600° C., and becoming a p-type or n-type thermoelectric material by a composition control, a manufacturing method thereof, and a thermoelectric power generation module thereof. A thermoelectric material according to the present invention including at least Al, Fe, and Si and represented by a general formula of Al.sub.12+p−qFe.sub.38.5+3qSi.sub.49.5−p−2q (where p satisfies 0≤p≤16.5 and q satisfies −0.34≤q≤0.34) and including a phase represented by Al.sub.2Fe.sub.3Si.sub.3 as a main phase.

Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided.

The thermoelectric module includes a first thermoelectric element including a first thermoelectric conversion layer and a first electrolyte layer stacked each other along a stacked direction, a second thermoelectric element stacking the first thermoelectric element in the stacked direction and including a second thermoelectric conversion layer and a second electrolyte layer stacked each other along the stacked direction, a first current collector located on a side of one edge in the stacked direction, a second current collector located on a side of another edge in the stacked direction, and an electron transmission layer located between the first thermoelectric element and the second thermoelectric element in the stacked direction.

The present invention relates to a thermoelectric measurement system based on a liquid eutectic gallium-indium electrode, whereby thermoelectric performance can be measured with excellent efficiency and high reproducibility even without construction of expensive equipment, various organic molecules as well as large-area molecular layers can be measured, and various thermoelectric materials, such as inorganic materials and inorganic-organic composite materials, can be measured. In addition, non-toxic liquid metal EGaIn is used as an upper electrode, so the damage to even a substance of measurement in the form of a nano-level thin film can be minimized, and the measurement of thermoelectric performance can be performed on even nano- to micro-level organic thermoelectric elements. Therefore, the thermoelectric measurement system is widely utilized across the thermoelectric element industry.