Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.

There is provided a thermoelectric conversion material in which a first layer containing Mg.sub.2Si.sub.xSn.sub.1-x (here, 0<x<1) is directly joined to a second layer containing Mg.sub.2Si.sub.ySn.sub.1-y (here, 0<y<1), where x/y is set within a range of more than 1.0 and less than 2.0. There is also provided a thermoelectric conversion element including the thermoelectric conversion material and electrodes each joined to one surface and the other surface of the thermoelectric conversion material. There is also provided a thermoelectric conversion module including terminals each joined to the electrodes of the thermoelectric conversion element.

A thermoelectric element according to one example of the present invention comprises: a first substrate; a first insulating layer disposed on the first substrate; a first bonding layer disposed on the first insulating layer; a second insulating layer disposed on the first bonding layer; a first electrode disposed on the second insulating layer; a P-type thermoelectric leg and N-type thermoelectric leg, disposed on the first electrode; a second electrode disposed on the P-type thermoelectric leg and N-type thermoelectric leg; a third insulating layer disposed on the second electrode; and a second substrate disposed on the third insulating layer, wherein the first insulating layer is composed of a composite comprising silicon and aluminum, the second insulating layer is a resin layer composed of a resin composition comprising an inorganic filler and at least one of an epoxy resin and a silicone resin, and the first bonding layer comprises a silane coupling agent.

A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

A thermoelectric conversion element includes a substrate, a thermoelectric conversion layer disposed on a first main surface of the substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode disposed on the insulating layer and connecting to a first main surface of the thermoelectric conversion layer via a first contact hole of insulating layer, and a second electrode disposed on the insulating layer and connecting to the first main surface of the thermoelectric conversion layer via a second contact hole of the insulating layer. At least a portion of the first electrode is formed from a material that has a work function that is different from a work function of a material forming the second electrode.

An infrared sensor includes a base substrate, an infrared light receiver, and a beam. The beam includes a separated portion separated from the base substrate to be suspended above the base substrate. The beam is connected at the separated portion to the infrared light receiver. The beam includes a p-type portion containing a p-type semiconductor and an n-type portion containing an n-type semiconductor. The p-type portion has a first three-dimensional structure including first recesses and a first solid portion formed between the first recesses. The first solid portion has, between the first recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The n-type portion has a second three-dimensional structure including second recesses and a second solid portion formed between the second recesses. The second solid portion has, between the second recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The beam satisfies at least one of following conditions (Ia) or (IIa): (Ia) the first solid portion includes a first portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a first reference sample that is made of a material of a type identical to a type of a material constituting the first solid portion and that does not have recesses; and (IIa) the second solid portion includes a second portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a second reference sample that is made of a material of a type identical to a type of a material constituting the second solid portion and that does not have recesses.

A transmission electron microscope high-resolution in situ fluid freezing chip includes a lower chip and an upper chip. The lower chip is provided with a support layer, a freezing layer, an insulating layer, an opening, and a center window. The freezing layer is provided with contact electrodes, semiconductor films, and a conductive metal film. The center window is surrounded by the conductive metal film; the contact electrodes are disposed at an edge of the chip. One ends of the semiconductor films are lapped on the conductive metal film, and the other ends are lapped on the electrodes. In the outer edge of the conductive metal film, silicon is etched to form the opening. The support layer covers the opening. The conductive metal film is disposed on the support layer. A plurality of holes are provided in the center window.

A thermoelectric element according to an embodiment of the present invention comprises: a first substrate; a first insulating layer disposed on the first substrate; a second insulating layer disposed on the first insulating layer; a first electrode disposed on the second insulating layer; a semiconductor structure disposed on the first electrode; a second electrode disposed on the semiconductor structure; and a second substrate disposed on the second electrode, wherein the composition of the first insulating layer is different from the composition of the second insulating layer, the first insulating layer includes a first region disposed on the first substrate and a second region disposed between the first region and the second insulating layer, and a particle size (D50) of an inorganic filler included in the second region is greater than the particle size (D50) of an inorganic filler included in the first region.

An absorber for absorbing electromagnetic radiation including a first layer with hydrogenated carbon, and a second layer with carbon, and the first layer is less absorbing than the second layer.

A thermoelectric conversion material according to the present disclosure includes Ge, Te, and Sb. The thermoelectric conversion material includes a first region and a second region. The content of Sb in the first region in terms of number density of atoms is higher than the content of Sb in the second region in terms of number density of atoms. The first region includes a dispersed phase.