A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

An apparatus comprising a substrate, one or more nanowire pillars, each having a base portion and a tip portion, a first electrode connected to the tip portions of the one or more nanowire pillars, an internal hollow cavity positioned between the substrate and the first electrode, such that at least a portion of each of the one or more nanowire pillars extend through the internal hollow cavity, and a second electrode proximate the first side of the substrate. High-performance broadband photodetectors and other optoelectronics for converting light to electricity with enhanced absorption and carrier collection.

An electronic device may include a first electrode, a first piezoelectric layer electrically coupled to the first electrode, a first magnetostrictive layer above the first piezoelectric layer, a first tunnel barrier layer above the first magnetostrictive layer, and a ferromagnetic layer above the first ferroelectric layer. The electronic device may further include a second electrode electrically coupled to the ferromagnetic layer a second tunnel barrier layer above the ferromagnetic layer, a second magnetostrictive layer above the second tunnel barrier layer, a second piezoelectric layer above the second magnetostrictive layer, and a third electrode electrically coupled to the second piezoelectric layer. The first piezoelectric layer may be strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer may be strained responsive to voltage applied across the second and third electrodes.

An electronic device may include a first electrode, a first piezoelectric layer electrically coupled to the first electrode, a first magnetostrictive layer above the first piezoelectric layer, a first tunnel barrier layer above the first magnetostrictive layer, and a ferromagnetic layer above the first ferroelectric layer. The electronic device may further include a second electrode electrically coupled to the ferromagnetic layer a second tunnel barrier layer above the ferromagnetic layer, a second magnetostrictive layer above the second tunnel barrier layer, a second piezoelectric layer above the second magnetostrictive layer, and a third electrode electrically coupled to the second piezoelectric layer. The first piezoelectric layer may be strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer may be strained responsive to voltage applied across the second and third electrodes.

Provided is a laminated piezoelectric element is formed by folding back and laminating a piezoelectric film having an electrode layer and a protective layer on both sides of a piezoelectric layer in which piezoelectric particles are dispersed in a matrix. In the laminated two layers of the piezoelectric film, in a case where a thickness of a central portion thereof is a center thickness and a position up to twice the center thickness in a direction from the folded side end part toward the center is the folded-back portion, there is a position at which the thickness is greater than the center thickness in the folded-back portion, and there is an air gap in the folded-back portion or the air gap is filled with a cementing agent. The laminated piezoelectric element is able to prevent peeling of the electrode layer and the like in the folded-back portion in the laminated piezoelectric element in which the piezoelectric film is folded back and laminated. An electroacoustic transducer uses the laminated piezoelectric element.

A waveform improvement method includes providing a piezoelectric material coupled to a matching material, generating a plurality of first grooves in a matching layer of at least one matching layer, packaging an isolation material into the plurality of first grooves, and providing two input voltages to the piezoelectric material for generating an ultrasonic signal by the piezoelectric material. The piezoelectric material includes at least one piezoelectric layer. The matching material includes at least one matching layer. The matching material is used to match acoustic impedance of the piezoelectric material. The plurality of first grooves in the matching layer are used to optimize the acoustic impedance and a vibration isolation effect.

A waveform improvement method includes providing a piezoelectric material coupled to a matching material, generating a plurality of first grooves in a matching layer of at least one matching layer, packaging an isolation material into the plurality of first grooves, and providing two input voltages to the piezoelectric material for generating an ultrasonic signal by the piezoelectric material. The piezoelectric material includes at least one piezoelectric layer. The matching material includes at least one matching layer. The matching material is used to match acoustic impedance of the piezoelectric material. The plurality of first grooves in the matching layer are used to optimize the acoustic impedance and a vibration isolation effect.