A piezoelectric element connection structure, a vehicle, and a piezoelectric element connection method are disclosed. This piezoelectric element connection structure includes: a body; a casing that include a bottom and is fixedly connected to the body so as to face the placing area for the board; a piezoelectric element that is placed on the bottom; and a coil wire that includes a winding shape, extends from the piezoelectric element toward the placing area for the board, and electrically connects between the piezoelectric element and the board.

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

A piezoelectric micromachined ultrasonic transducer (PMUT) device includes a layer of piezoelectric material that is activated and sensed by an electrode and a conductive plane layer. The conductive plane layer may be electrically connected to processing circuitry by a via that extends through the piezoelectric layer. One or more isolation trenches extend through the conductive plane layer to isolate the conductive plane layer from other conductive plane layers of adjacent PMUT devices of a PMUT array.

A vibrator includes a vibrating part including a pair of vibrating plates and a piezoelectric material provided between the pair of vibrating plates, a supporting part including a pair of supporting plates and an interplate portion provided between the pair of supporting plates, and a wire provided in the vibrating part and the supporting part, wherein the wire is exposed from the supporting part.

A single crystal piezoelectric layer includes a first recess in a first opposing surface opposing a first main surface of a base. The single crystal piezoelectric layer is bonded to the first main surface of the base at a portion of the first opposing surface other than the first recess. A lower electrode layer defining at least a portion of a pair of electrode layers and extending over a surface of the single crystal piezoelectric layer opposing the base is at least partially located in the first recess. A second opposing surface of the lower electrode layer opposing the first main surface of the base has surface roughness greater than the surface roughness of the first opposing surface of the single crystal piezoelectric layer.

A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material layer forms a pair of interdigitated transducers to provide a surface wave acoustic (SAW) device. The SAW device of the present disclosure is usable to realize SAW-based filters for wireless communication equipment.

The force sensing device (1) comprising: a sheet (2) of piezoelectric; at least a first and a second interdigitated electrodes (5, 50) located on a first main face (3) and at least a third and fourth interdigitated electrodes (6, 60) located on a second main face (4) of the sheet (2), the first and third electrodes (5, 6) being aligned to each other along a normal stress direction (N), the second and fourth electrodes (50, 60) being aligned to each other along the normal stress direction (N); the piezoelectric material comprising first portions (100) facing the first and third electrodes (5, 6) interposed with second portions (101) facing the second and fourth electrodes (50, 60), the first portions (100) having bulk electric polarization with vector field (E) mostly oriented in alignment with the normal stress direction (N), the second portions (101) having bulk electric polarization with vector field (E) mostly oriented transversally to the normal stress direction (N).

The force sensing device (1) comprising: a sheet (2) of piezoelectric; at least a first and a second interdigitated electrodes (5, 50) located on a first main face (3) and at least a third and fourth interdigitated electrodes (6, 60) located on a second main face (4) of the sheet (2), the first and third electrodes (5, 6) being aligned to each other along a normal stress direction (N), the second and fourth electrodes (50, 60) being aligned to each other along the normal stress direction (N); the piezoelectric material comprising first portions (100) facing the first and third electrodes (5, 6) interposed with second portions (101) facing the second and fourth electrodes (50, 60), the first portions (100) having bulk electric polarization with vector field (E) mostly oriented in alignment with the normal stress direction (N), the second portions (101) having bulk electric polarization with vector field (E) mostly oriented transversally to the normal stress direction (N).