A piezoelectric composite material is based on a polymeric matrix and on piezoelectric inorganic fillers, characterized in that the material additionally comprises at least one ionic liquid of general formula Q+ A−, in which Q+ represents a cation chosen from quaternary ammonium cations and quaternary phosphonium cations and A− represents any anion capable of forming a liquid salt at a temperature of less than 100° C. A device comprising at least one layer based at least one piezoelectric composite material defined above and at least two electrodes positioned on either side of the layer and a tire comprising at least one piezoelectric device defined above are also set forth.

An acoustic generator including a piezoelectric crystal, an impedance matching layer directly bonded to the crystal with Van der Waals forces.

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.

A piezoelectric actuator is disclosed that may include a insulating layer, individual electrodes, a common electrode, and a piezoelectric layer. The common electrode may include divisional electrodes that are connected with one another. The individual electrodes may be disposed between the insulating layer and the piezoelectric layer while the piezoelectric layer may be disposed between the individual electrodes and the common electrode. Further, the divisional electrodes may be configured to face the individual electrodes.

A piezoelectric actuator is disclosed that may include a insulating layer, individual electrodes, a common electrode, and a piezoelectric layer. The common electrode may include divisional electrodes that are connected with one another. The individual electrodes may be disposed between the insulating layer and the piezoelectric layer while the piezoelectric layer may be disposed between the individual electrodes and the common electrode. Further, the divisional electrodes may be configured to face the individual electrodes.

The invention relates to a method for manufacturing an electroacoustic resonator comprising the steps of: Providing a first substrate having a first side and an opposite second side; depositing a diamond layer having a first side and an opposite second side on said first substrate, wherein the second side of the diamond layer is in contact with said first side of the first substrate; removing the first substrate; forming a piezoelectric layer on the second side of the diamond layer; applying a second substrate to the first side of the diamond layer.

The invention relates to a method for manufacturing an electroacoustic resonator comprising the steps of: Providing a first substrate having a first side and an opposite second side; depositing a diamond layer having a first side and an opposite second side on said first substrate, wherein the second side of the diamond layer is in contact with said first side of the first substrate; removing the first substrate; forming a piezoelectric layer on the second side of the diamond layer; applying a second substrate to the first side of the diamond layer.

A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.

A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.