Patent classifications
H10N30/097
PIEZOELECTRIC CERAMIC COMPOSITION AND PIEZOELECTRIC ACTUATOR
Provided is a piezoelectric ceramic composition including a potassium sodium niobate-based perovskite type complex oxide represented by Compositional Formula ABO.sub.3, as a main component. Further, the piezoelectric ceramic composition contains Bi in an A site and Zr in a B site. Further, the piezoelectric ceramic composition includes a segregation portion positioned in a crystal grain. At least one of Zr or Bi is localized in the segregation portion.
Piezoelectric material filler, composite piezoelectric material, composite piezoelectric device, composite piezoelectric material filler, and method for producing alkali niobate compound
Provided is a piezoelectric material filler including alkali niobate compound particles having a ratio (K/(Na+K)) of the number of moles of potassium to the total number of moles of sodium and potassium of 0.460 to 0.495 in terms of atoms and a ratio ((Li+Na+K)/Nb) of the total number of moles of alkali metal elements to the number of moles of niobium of 0.995 to 1.005 in terms of atoms. The present invention can provide a piezoelectric material filler having excellent piezoelectric properties, and a composite piezoelectric material including the piezoelectric material filler and a polymer matrix.
Piezoelectric material filler, composite piezoelectric material, composite piezoelectric device, composite piezoelectric material filler, and method for producing alkali niobate compound
Provided is a piezoelectric material filler including alkali niobate compound particles having a ratio (K/(Na+K)) of the number of moles of potassium to the total number of moles of sodium and potassium of 0.460 to 0.495 in terms of atoms and a ratio ((Li+Na+K)/Nb) of the total number of moles of alkali metal elements to the number of moles of niobium of 0.995 to 1.005 in terms of atoms. The present invention can provide a piezoelectric material filler having excellent piezoelectric properties, and a composite piezoelectric material including the piezoelectric material filler and a polymer matrix.
METHOD FOR THE PREPARATION OF A LEAD-FREE PIEZOELECTRIC MATERIAL AND PRECURSOR SOLUTION
The present disclosure relates to a method for the preparation of a precursor solution for a ceramic of the BZT-aBXT type wherein X is selected from Ca, Sn, Mn and Nb and a is a molar fraction selected in the range between 0.10 and 0.90 comprising the steps of: a) dissolving at least one barium precursor compound and at least one precursor compound selected from the group consisting of a calcium precursor compound, a tin precursor compound, a manganese precursor compound and a niobium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms and, after dissolution, dehydrating by stripping, to obtain a first solution; b) dissolving at least one zirconium precursor compound and at least one titanium precursor compound in a linear or branched anhydrous alkyl alcohol containing from 2 to 6 carbon atoms in the presence of an anhydrous chelating agent to obtain a second solution; c) joining said first and second solutions in an anhydrous environment and dehydrating by stripping to obtain said precursor solution. It also relates to a precursor solution, to a method for the preparation of a film of a piezoelectric material, to a piezoelectric material and to an electronic device comprising this piezoelectric material.
Piezoelectric composition and piezoelectric element
A piezoelectric composition including manganese and a complex oxide having a perovskite structure represented by a general formula ABO.sub.3, wherein an A site element in the ABO.sub.3 is potassium or potassium and sodium, a B site element in the ABO.sub.3 is niobium, a concentration distribution of the manganese has a variation, and the variation shows a CV value of 35% or more and 440% or less.
Lead-free piezoceramic material based on bismuth sodium titanate (BST)
The invention relates to a lead-free piezoceramic material based on bismuth sodium titanate (BST) having the following parent composition: x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-yBaTiO.sub.3-zSrTiO.sub.3 where x+y+z=1 and 0<x<1, 0<y<1, 0≤z≤0.07 or x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-yBaTiO.sub.3-zCaTiO.sub.3 where x+y+z=1 and 0<x<1, 0<y<1, 0<z≤0.05 or x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-zBaTiO.sub.3 where x+y+z=1 and 0<x<1, 0<y<1, 0≤z<1, characterized by addition of a phosphorus-containing material in a quantity that gives a phosphorus concentration of from 100 to 2000 ppm in the piezoceramic material.
DEVELOPMENT OF HIGH POWER TEXTURED PIEZOELECTRIC CERAMICS WITH ULTRAHIGH ELECTROMECHANICAL PROPERTIES FOR LARGE DRIVING FIELD APPLICATIONS
Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification/doping and/or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO.sub.3 (BT) template.
DEVELOPMENT OF HIGH POWER TEXTURED PIEZOELECTRIC CERAMICS WITH ULTRAHIGH ELECTROMECHANICAL PROPERTIES FOR LARGE DRIVING FIELD APPLICATIONS
Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification/doping and/or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO.sub.3 (BT) template.
MICRO ELECTRO MECHANICAL SYSTEMS SENSOR AND METHOD FOR MANUFACTURING THE SAME
A micro-electro-mechanical systems (MEMS) sensor includes a substrate, a diaphragm portion and a piezoelectric film. The diaphragm portion is located at the substrate. The piezoelectric film is located on the diaphragm portion. The piezoelectric film is made of scandium aluminum nitride. A carbon concentration of the piezoelectric film is 2.5 atomic percent or less while an oxygen concentration of the piezoelectric film is 0.35 atomic percent or less.
PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC SENSOR
A piezoelectric element includes a laminate including first and second piezoelectric layers with respective polarization directions in a thickness direction and an elastic layer provided between the first piezoelectric layer and the second piezoelectric layer, first and second terminal electrodes that are provided on an external surface of the laminate, a first detection electrode provided on a positive polar surface of the first piezoelectric layer, a second detection electrode provided on a negative polar surface of the first piezoelectric layer, a third detection electrode provided on a positive polar surface of the second piezoelectric layer, and a fourth detection electrode provided on a negative polar surface of the second piezoelectric layer. The first detection electrode and the fourth detection electrode are connected to the first terminal electrode. The second detection electrode and the third detection electrode are connected to the second terminal electrode.