The present invention discloses a piezoelectric device comprising an amino acid crystal.

A piezoelectric element includes: a piezoelectric body having a first surface and a second surface that are different from each other; a first electrode provided at the first surface; and a second electrode provided at the second surface. The piezoelectric body contains a helical chiral polymer crystal having an orientation axis as a crystal axis, the orientation axis is uniaxially oriented in a manner of intersecting both the first surface and the second surface, and a degree of orientation of the orientation axis in the piezoelectric body is 0.80 or more.

A very small piezoelectric sensor capable of being mass produced includes a core, a piezoelectric layer on a surface of the core; and a conductive layer on a surface of the piezoelectric layer away from the core. The core is flexible and threadlike, the core is a first electrode of the piezoelectric sensor, and the conductive layer is a second electrode of the piezoelectric sensor. An array of such sensors allows the “skin” of a robot for example to simulate the sensitivity of hair-covered human skin. A method for making the piezoelectric sensor and an electronic device using the piezoelectric sensor are also disclosed.

A dielectric polymeric composition comprising a polymeric matrix comprising structural units derived from a polymerizable vinyl monomer; an ionic liquid comprising an organic cation and a balancing anion, wherein the ionic liquid is miscible or partially miscible with the polymerizable vinyl monomer, and wherein the concentration of ionic liquid in dielectric polymeric composition ranges from 0.5 to 30 wt. %; and less than 10 ppm of unreacted polymerizable vinyl monomer, based on the total weight of the composition, wherein an amount of unreacted polymerizable vinyl monomer in the composition is measured via HPLC. The polymeric matrix further comprises structural units derived from a polymerizable co-monomer comprising a functional group that has the ability to form hydrogen bonds within the polymeric matrix. The polymeric matrix further comprises a crosslinking agent, and wherein the polymeric matrix comprises covalent crosslinks between the crosslinking agent and the structural units derived from the polymerizable vinyl monomer.

Proposed is a method of manufacturing a piezoelectric composite material. The method includes the steps: wet mixing the ceramic powder, the polymer binder, the plasticizer, and the solvent for 4 to 72 hours to produce the mixed slurry, in which the amount of the polymer binder in the mixed slurry is 3 to 10 parts by weight, the amount of the plasticizer is 0.1 to 3 parts by weight, and the amount of the solvent is 30 or more to less than 50 parts by weight, based on 100 parts by weight of the ceramic powder in the mixed slurry; introducing the mixed slurry into a tape casting process to produce a piezoelectric composite sheet; drying and molding the piezoelectric composite sheet in a roll-to-roll process to form a molded piezoelectric composite sheet; laminating and compressing piezoelectric composite sheets molded to produce piezoelectric composite sheet laminates; and cutting the piezoelectric composite sheet laminate into the desired shape and size.

A system and method for making electret media is presently provided. The method involves placing a piezoelectric material adjacent a media and applying a mechanical stress to the piezoelectric material and thereby transferring an electric charge from the piezoelectric material to the media and making the electret media. The system is configured to place the piezoelectric material adjacent the media and to apply mechanical stress to the piezoelectric material.

An actuator assembly includes a primary electrode, a secondary electrode overlapping at least a portion of the primary electrode, and an electroactive polymer layer disposed between the primary electrode and the secondary electrode, where the electroactive polymer layer includes a non-vertical (e.g., sloped) sidewall with respect to a major surface of at least one of the electrodes. The electroactive polymer layer may be characterized by a non-axisymmetric shape with respect to an axis that is oriented orthogonal to an electrode major surface.

According to one embodiment, a flexible substrate includes a line portion including a support plate including a first surface, a flexible insulating base located on the first surface and a wiring layer disposed on the insulating base, a piezoelectric material covering the line portion, a protective member located on the piezoelectric material and an island-shaped first electrode provided on the insulating base.

A structure includes an oriented piezoelectric polymer arranged in a circular tubular or circular columnar shape, wherein the orientation angle of the piezoelectric polymer with respect to the central axis of the structure is 15° to 75°, the piezoelectric polymer includes a crystalline polymer having an absolute value of 0.1 to 1000 pC/N for the piezoelectric constant d14 when the orientation axis is the third axis, and the piezoelectric polymer includes a P-body containing a crystalline polymer with a positive piezoelectric constant d14 value and an N-body containing a crystalline polymer with a negative value, wherein for the portion of the central axis of the structure having a length of 1 cm, the value of T1/T2 is 0 to 0.8, T1 being the smaller and T2 being the larger of (ZP+SN) and (SP+ZN), where ZP, SP, ZN, and SN are particularly defined masses.

A thin-film transistor may include an amorphous semiconductor channel layer, an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer, a source electrode coupled to the organic material piezoelectric stress gate layer, a drain electrode coupled to the organic material piezoelectric stress gate layer and a gate electrode coupled to the organic material piezoelectric stress gate layer. In some embodiments, the amorphous semiconductor channel layer may be amorphous indium gallium zinc oxide. In some embodiments, the organic material piezoelectric stress gate layer may be organic polyvinylidene fluoride. In some embodiments, the amorphous semiconductor channel layer may be formed on a flexible substrate.