A method for manufacturing a piezoelectric film deposition substrate (100) according to this present invention includes forming a piezoelectric film (3) on or above the lower electrode (2) with the mask (5) being attached on or above the lower electrode; forming an upper electrode (4) on the piezoelectric film with the mask being attached on or above the lower electrode; forming a the lower-electrode-exposed part (2a) by detaching the mask from the lower electrode; and subjecting the piezoelectric film to polarization by applying a voltage between the lower-electrode-exposed part and the upper electrode.

A device and a method are described in which a flow detection service is provided. The service may include use of a piezoelectric flexural element. The piezoelectric flexural element may be disposed in an inlet, an outlet, or a passageway via which a resource may flow. The piezoelectric flexural element may output a signal responsive to a transition from a zero-flow rate to a greater than zero flow rate of the resource traversing the inlet, the passageway, and the outlet. The flow detection service may be implemented in a meter. The flow detection service may enable significant reduction of battery usage and at a low cost.

An imaging system includes: a transceiver cell for generating a pressure wave and converting an external pressure wave into an electrical signal; and a control unit for controlling an operation of the transceiver cell. The transceiver cell includes: a substrate; at least one membrane suspending from the substrate; and a plurality of transducer elements mounted on the at least one membrane. Each of the plurality of transducer elements has a bottom electrode, a piezoelectric layer on bottom electrode, and at least one top electrode on the piezoelectric layer. Each of the plurality of transducer element generates a bending moment in response to applying an electrical potential across the bottom electrode and the at least one top electrode and develops an electrical charge in response to a bending moment due to the external pressure wave.

A piezoelectric device and a fabricating method thereof, and an electronic device and a controlling method thereof, which relates to the technical field of piezoelectric devices. The piezoelectric device includes: a flexible substrate and a plurality of piezoelectric units that are provided on the flexible substrate and are arranged in an array; each of the plurality of piezoelectric units includes: a first electrode, a piezoelectric component and a second electrode that are sequentially stacked on the flexible substrate; and the piezoelectric component is made from a rigid material. The present disclosure is suitable for the fabrication of piezoelectric devices.

Described are micromachined ultrasonic transducers (MUTs) with convex or concave electrodes, which have enhanced pressure amplitude and frequency response behavior when driven at fundamental and harmonic frequencies, as well as methods of making the same.

A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.

The vibration device includes a diaphragm, and a plurality of piezoelectric films that are arranged at predetermined intervals in a first direction of the diaphragm to face the diaphragm and extend parallel to a second direction orthogonal to the first direction. The diaphragm has at least one slit formed therein and dividing the diaphragm into respective regions. Each of the piezoelectric films are fixed to a respective region of the diaphragm while extending along the second direction in a tensioned state. The piezoelectric films expand and contract in a plane direction when a voltage is applied thereto.

According to various embodiments, a MEMS device includes a substrate, an electrically movable heating element having a first node coupled to a first terminal of a first voltage source and the second node coupled to a reference voltage source, a first anchor anchoring the first node and a second anchor anchoring the second node of the electrically movable heating element to the substrate, and a cavity between the first anchor and the second anchor and between the electrically movable heating element and the substrate.

A method, in accordance with one embodiment, includes forming an array of structures from a raw material via cold spray. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of the raw material, and essentially the same functional properties as the raw material. A method, in accordance with another embodiment, includes positioning a mask between a cold spray nozzle and a substrate, and forming a structure on the substrate by cold spraying a raw material from the cold spray nozzle. The structure has a shape corresponding to an aperture in the mask.

A piezoelectric element includes a first electrode, a piezoelectric layer formed of a first piezoelectric film which is formed on the first electrode and which includes potassium, sodium, and niobium and a plurality of second piezoelectric films which are formed on the first piezoelectric film and which include potassium, sodium, and niobium, and a second electrode formed on the piezoelectric layer, in which the piezoelectric layer is a stack of a plurality of piezoelectric films, the first piezoelectric film has a thickness of 30 nm to 70 nm, a concentration of sodium in each of the piezoelectric films is along a gradient in the film thickness direction with the first electrode side being high and the second electrode side being low.