A method of transducing electrical energy to sound is disclosed which includes providing a transducer, the transducer includes lead zirconate titanate (PZT) particles mixed with graphene nanoplatelets (GNPs) in a flexible substrate aligned in a first direction, forming a transducer subsystem, a first conductive protective electrode having a width and a length configured to provide a first electrical connectivity to an external circuit, and a second conductive protective electrode having the width and the length and configured to provide a second electrical connectivity to the external circuit, wherein the transducer subsystem is sandwiched between the first and second conductive protective electrodes, and providing an external circuit configured to provide an electrical signal to the first and second conductive protective electrodes to thereby transduce the electrical signal to sound.

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

The present invention is directed to a method for manufacturing an ultrasonic fingerprint sensor by using a nanorod structure, the method including: a conductive mold generating step of generating a plurality of rod generation holes; a nanorod generating step of generating nanorods by filling the plurality of rod generation holes with a nano-piezoelectric material; a side electrode generation portion marking step of marking side electrode generation portions; a conductive mold etching step of generating nanorods and side electrodes by performing primary etching on the conductive mold; an insulating material filling step of filling portions with an insulating material; a lower electrode forming step of performing secondary etching and forming lower electrodes; a dummy substrate bonding step of bonding a dummy substrate to a surface on which the lower electrodes are formed; and an upper electrode forming step of removing the conductive substrate base and forming upper electrodes.

A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986≤c/a≤1.014.

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.

Provided is a piezoelectric thin film device in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (first electrode layer) is reduced. A piezoelectric thin film device 10 comprises a first electrode layer 6a and a piezoelectric thin film 2 laminated directly on the first electrode layer 6a; the first electrode layer 6a includes an alloy composed of two or more metal elements; the first electrode layer 6a has a body-centered cubic lattice structure; and the piezoelectric thin film 2 has a wurtzite structure.

A grip detection sensor that includes: a piezoelectric film having a first main surface and a second main surface, either one of the first main surface and the second main surface being disposed at least partly on a periphery of a linearly shaped flexible object, a first electrode on the first main surface, a second electrode on the second main surface, and a spacer configured to maintain a space between the object and the piezoelectric film.

A piezoelectric sensor and a manufacturing method therefor, and a detection apparatus, which relate to the technical field of sensing. The piezoelectric sensor includes: an array substrate: a first capping layer located on the array substrate and including a first portion and a second portion, wherein the first portion covers the array substrate, a cavity is provided between the second portion and the array substrate, and the second portion is provided with a first opening: a first electrode located above the first capping layer and above the cavity, a piezoelectric thin film located on the first electrode, and a second electrode located on the piezoelectric thin film.

A transducer is disclosed which includes lead zirconate titanate (PZT) particles mixed with graphene nanoplatelets (GNPs) in a flexible substrate aligned in a first direction, forming a transducer subsystem, a first conductive protective electrode having a width and a length providing an electrical connectivity to an external circuit, a second conductive protective electrode having the width and the length providing an electrical connectivity to the external circuit, wherein the transducer subsystem is sandwiched between the first and second conductive protective electrodes.