The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.

The present invention relates to a method of fabricating a shape-changeable magnetic member comprising a plurality of segments with each segment being able to be magnetized with a desired magnitude and orientation of magnetization, to a method of producing a shape changeable magnetic member composed of a plurality of segments and to a shape changeable magnetic member.

A suspended piezoelectric ultrasonic transducer includes a semiconductor substrate and a piezoelectric ultrasonic sensing element. The semiconductor substrate includes a columnar arrangement area, a peripheral wall, and one or more bridge portions. A cavity is between the columnar arrangement area and the peripheral wall. The cavity surrounds the columnar arrangement area, and the bridge portion is connected to the columnar arrangement area and the peripheral wall. The piezoelectric ultrasonic sensing element is disposed on the columnar arrangement area. Through providing the cavity and the bridge portion on the semiconductor substrate, the resonance frequency, the acoustic pressure, and the emitting angle of the transducer can be adjusted, thereby providing a greater manufacturing tolerance for the transducer.

A RF antenna or sensor has a substrate, a resonator operable at UHF disposed on the substrate, the resonator preferably having a quartz bar or body with electrodes disposed on opposing major surfaces thereof and with a magnetostrictive material disposed on or covering at least one of the electrodes. A pair of trapezoidal, triangular or wing shaped high permeability pole pieces preferably supported by that substrate are disposed confronting the resonator, one of the pair being disposed one side of the resonator and the other one of the pair being disposed on an opposing side of said resonator, the pair of high permeability pole pieces being spaced apart by a gap G, the resonator being disposed within that gap G. The size of gap G is preferably less than 100 μm.

A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

A torque load member has a detected surface which is configured to face a magnetostrictive torque sensor. The detected surface is a shot peened surface whose magnetic anisotropy directed in a specific direction has been reduced by performing shot peening thereto at an arc height value of 0.31 mmA or more.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

A flexible tactile actuator includes a tactile transmitter configured to be flexible and including magnetic particles capable of being polarized in response to an external magnetic field and a matrix layer including the magnetic particles, a magnetic field generator disposed below the tactile transmitter and configured to generate a magnetic field in the tactile transmitter, and an elastic member provided in a shape of a film, having at least a portion in surface contact with the magnetic field generator, and attached to be in surface contact with one of a top surface and a bottom surface of the tactile transmitter.