Task of the present invention is to provide a power-generating magnetostrictive element and a magnetostrictive power generation device equipped with the same, which are capable of achieving the same or a greater magnetostrictive power generation amount compared to conventional technology while employing materials lower in cost compared to conventional magnetostrictive materials. The task is achieved by providing a magnetostrictive element comprising a magnetostrictive part formed of an electromagnetic metal sheet. The present invention also provides a power-generating magnetostrictive element and a power-generating magnetostrictive element having high voltage with little variation. The task is achieved by providing a magnetostrictive element comprising a magnetostrictive part formed from a magnetostrictive material and a stress control part formed from an elastic material, the materials each having a Young's modulus and a sheet thickness simultaneously satisfying specific relationships.

A magnetoelectric (“ME”) device is disclosed. In one aspect, the ME device includes a first piezoelectric substrate portion and a second piezoelectric substrate portion; a magnetostrictive body with a magnetization oriented in a first direction, the magnetostrictive body arranged on and extending between the first and second portions; a pair of input electrodes arranged on the first portion; and a pair of output electrodes arranged on the second portion. The input electrodes are configured to induce a fringing electric field extending between the input electrodes via the first portion, thereby causing a deformation of the first portion which in turn causes a deformation of the magnetostrictive body such that the magnetization thereof is re-oriented to a second direction due to a reverse magnetostriction. An output voltage is induced between the output electrodes by a deformation of the second portion caused by the re-orientation of the magnetization of the magnetostrictive body.

An actuator device includes at least one actuator element, which consists at least partially of a magnetically shape-shiftable material and which is configured at least for the purpose of causing a movement of at least one actuation element in at least one direction of movement by means of a contraction, and having a magnetic contraction unit, which is configured for the purpose of supplying a magnetic field acting upon the actuator element in order to generate a contraction of the actuator element. In the region of the actuator element, field lines of the magnetic field are aligned at least substantially parallel to the direction of movement.

An electronic device may include a first electrode, a first magnetostrictive layer coupled to the first electrode, a plurality of alternating ferromagnetic and insulating layers stacked above the first magnetostrictive layer, a second electrode electrically coupled to an intermediate ferromagnetic layer in the stack of ferromagnetic and insulating layers, a second magnetostrictive layer above the stack of ferromagnetic and insulating layers, and a third electrode electrically coupled to the second magnetostrictive layer. At least one ferromagnetic layer below the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a first voltage applied across the first and second electrodes, and at least one ferromagnetic layer above the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a second voltage applied across the second and third electrodes.

An electronic device may include a first electrode, a first magnetostrictive layer coupled to the first electrode, a plurality of alternating ferromagnetic and insulating layers stacked above the first magnetostrictive layer, a second electrode electrically coupled to an intermediate ferromagnetic layer in the stack of ferromagnetic and insulating layers, a second magnetostrictive layer above the stack of ferromagnetic and insulating layers, and a third electrode electrically coupled to the second magnetostrictive layer. At least one ferromagnetic layer below the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a first voltage applied across the first and second electrodes, and at least one ferromagnetic layer above the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a second voltage applied across the second and third electrodes.

Described herein is the use of a biased suitable ferrimagnetic crystal or suitable ferromagnetic crystal, for example, a hexaferrite ferrimagnetic semiconductive crystal for detection of the radiation on GHz frequencies. Specifically, the frequency of either ferromagnetic or multidomain resonance of the hexaferrite semiconductor crystal can be changed as a result of electric current flow and the value of current can be calculated based on the frequency shift measurement. This principle can be used for radiation detection.

A RF antenna or sensor has a substrate, a resonator operable at UHF disposed on the substrate, the resonator preferably having a quartz bar or body with electrodes disposed on opposing major surfaces thereof and with a magnetostrictive material disposed on or covering at least one of the electrodes. A pair of trapezoidal, triangular or wing shaped high permeability pole pieces preferably supported by that substrate are disposed confronting the resonator, one of the pair being disposed one side of the resonator and the other one of the pair being disposed on an opposing side of said resonator, the pair of high permeability pole pieces being spaced apart by a gap G, the resonator being disposed within that gap G. The size of gap G is preferably less than 100 μm.

A magnetic sensor includes a piezomagnetic component which includes a first piezomagnetic element and a second piezomagnetic element that are arranged opposite to each other, a magnetostrictive component which includes a first magnetostrictive element and a second magnetostrictive element arranged opposite to each other on the same side of the first piezomagnetic element and the second piezomagnetic element, respectively, and a piezoelectric component which includes a first piezoelectric element deposited underneath the first piezomagnetic element, a second piezoelectric element deposited underneath the second piezomagnetic element, a third piezoelectric element deposited underneath the first magnetostrictive element, and a fourth piezoelectric element deposited underneath the second magnetostrictive element. The first piezoelectric element and the second piezoelectric element are electrically connected to a power supply circuit, and produce first deformation, which is applied to the first piezomagnetic element and the second piezomagnetic element to produce an alternating magnetic field.

A magnetic sensor includes a piezomagnetic component which includes a first piezomagnetic element and a second piezomagnetic element that are arranged opposite to each other, a magnetostrictive component which includes a first magnetostrictive element and a second magnetostrictive element arranged opposite to each other on the same side of the first piezomagnetic element and the second piezomagnetic element, respectively, and a piezoelectric component which includes a first piezoelectric element deposited underneath the first piezomagnetic element, a second piezoelectric element deposited underneath the second piezomagnetic element, a third piezoelectric element deposited underneath the first magnetostrictive element, and a fourth piezoelectric element deposited underneath the second magnetostrictive element. The first piezoelectric element and the second piezoelectric element are electrically connected to a power supply circuit, and produce first deformation, which is applied to the first piezomagnetic element and the second piezomagnetic element to produce an alternating magnetic field.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.