A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a second tunnel barrier layer and a reference layer. The SOT ferromagnetic free layer is over the SOT bottom electrode. The SOT ferromagnetic free layer has a magnetic orientation switchable by the SOT bottom electrode using a spin Hall effect or Rashba effect. The first tunnel barrier layer is over the SOT ferromagnetic free layer. The STT ferromagnetic free layer is over the first tunnel barrier layer and has a magnetic orientation switchable using an STT effect. The second tunnel barrier layer is over the STT ferromagnetic free layer. The second tunnel barrier layer has a thickness different from a thickness of the first tunnel barrier layer. The reference layer is over the second tunnel barrier layer and has a fixed magnetic orientation.

A semiconductor device includes a semiconductor substrate of a first conductivity type, and a vertical Hall element provided on the semiconductor substrate. The vertical Hall element includes an impurity diffusion layer of a second conductivity type and three or more electrodes. The impurity diffusion layer is provided on the semiconductor substrate and has an impurity concentration which increases as a depth increases. The three or more electrodes are provided in a straight line on a surface of the impurity diffusion layer and are composed of an impurity region of the second conductivity type having a higher concentration than the impurity diffusion layer.

Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.

A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.

Various embodiments of the present disclosure provide a power device including at least one first conductive element adapted to generate a magnetic field when traversed by a current, and characterised in that it further comprises a Hall sensor electrically insulated from the first conductive element. The sensor and the first conductive element are mutually arranged so as to detect said magnetic field indicative of the current that traverses the first conductive element.

A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function includes a buffer layer, an epitaxial layer, and a barrier layer sequentially grown on a substrate. A high-density two-dimensional electron gas is induced by polarization charges in a potential well at an interface of heterojunctions of the epitaxial layer. A lower surface of the substrate includes a vertical Hall sensor for sensing a magnetic field parallel to a surface of a device. An upper surface of the barrier layer includes a “cross” horizontal Hall sensor for sensing a magnetic field perpendicular to the surface of the device.

A magnetic domain wall movement type magnetic recording element according to an embodiment includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. A first surface of the magnetic recording layer which faces the non-magnetic layer has a smaller arithmetic mean roughness than a second surface opposite to the first surface.