A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, and a reference layer, forming a cylindrical diode structure above and in electrical contact with the SOT-MRAM cell stack, forming a write line disposed in electrical contact with the SHE rail, and forming a read line disposed above and adjacent to an outer cylindrical electrode of the diode structure.

The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.

A circuit for sensing a current comprises a substrate having a first and a second major surface, the second major surface being opposite to the first major surface. At least one magnetic field sensing element is arranged on the first major surface of the substrate and is suitable for sensing a magnetic field caused by a current flow in a current conductor coupled to the second major surface. The substrate also comprises at least one insulation layer, substantially buried between the first major surface and the second major surface of the substrate.

A spin-orbit torque magnetoresistive random-access memory device formed by forming an array of transistors, where a column of the array includes a source line contacting the source contact of each transistor of the column, forming a spin-orbit-torque (SOT) line contacting the drain contacts of the transistors of the row, and forming an array of unit cells, each unit cell including a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SOT line, where the SOT-MRAM cell stack includes a free layer, a tunnel junction layer, and a reference layer, a diode structure above and in electrical contact with the SOT-MRAM cell stack, an upper electrode disposed above and in electrical contact with the diode structure.

A Hall effect sensor including a Hall element disposed at a surface of a semiconductor body, including a first doped region of a first conductivity type disposed over and abutted by an isolated second doped region of a second conductivity type. First through fourth terminals of the Hall element are in electrical contact with the first doped region, and a fifth terminal in electrical contact with the second doped region. A Hall effect sensor includes a first current source coupled to the first terminal of the Hall element, and common mode feedback regulation circuitry. The common mode feedback regulation circuitry has an output coupled to the third terminal and a ground node, and having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node, where the second doped region is coupled to the third terminal.

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SHE rail, wherein the SOT-MRAM cell stack comprises a free layer, a tunnel junction layer, a reference layer, and a diode structure, forming a write line disposed in electrical contact with the SHE rail, forming a protective dielectric layer covering a portion of the SOT-MRAM cell stack, and forming a read line disposed above and adjacent to the diode structure.

A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a plurality of stacks of vertical magnetoresistive random-access memory (MRAM) cell stacks, each stack formed upon a different bottom electrode, each stack including: a first vertical MRAM cell stack, the first vertical MRAM cell stack disposed upon a first bottom electrode, a first metal layer disposed above and in electrical contact with the first MRAM cell stack, and a second vertical MRAM cell stack, the second MRAM cell stack disposed above and in electrical contact with the first metal layer. Further by fabricating a low resistivity layer between adjacent stacks of vertical MRAM cell stacks, the low resistivity layer in electrical contact with the spin-Hall-Effect layer of each of the adjacent stacks.

There is provided a magnetoresistance effect element includes: a channel layer that extends in a first direction; a recording layer which includes a film formed from a ferromagnetic material, of which a magnetization state is changed to one of two or greater magnetization states, and which is formed on the channel layer; a non-magnetic layer that is provided on a surface of the recording layer; a reference layer which is provided on a surface of the non-magnetic layer, which includes a film formed from a ferromagnetic material, and of which a magnetization direction is fixed; a terminal pair that includes a first terminal and a second terminal which are electrically connected to the channel layer with an interval in the first direction, and to which a current pulse for bringing the recording layer to any one magnetization state with a plurality of pulses is input by flowing a current to the channel layer between the first terminal and the second terminal; and a third terminal that is electrically connected to the reference layer.

A spin orbit memory device includes a material layer stack on a spin orbit electrode. The material layer stack includes a magnetic tunnel junction (MTJ) and a synthetic antiferromagnetic (SAF) structure on the MTJ. The SAF structure includes a first magnet structure and a second magnet structure separated by an antiferromagnetic coupling layer. The first magnet structure includes a first magnet and a second magnet separated by a single layer of a non-magnetic material such as platinum. The second magnet structure includes a stack of bilayers, where each bilayer includes a layer of platinum on a layer of a magnetic material such.