A semiconductor-superconductor hybrid device comprises a semiconductor component and a superconductor component arranged over the semiconductor component. The superconductor component comprises a continuous portion of a superconductor material and a discontinuous portion of a non-ferromagnetic metal. The discontinuous portion is configured to increase the critical field of the superconductor component. It has been found that providing a superconductor component with a discontinuous portion of non-ferromagnetic metal may increase the critical field of the superconductor component, allowing the device to be operated in a stronger magnetic field. Further aspects provide a method of fabricating the device, and the use of a non-ferromagnetic metal to increase the critical field of a superconductor component of a semiconductor-superconductor hybrid device.

An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.

An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.

An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.

Methods and designs are provided for a vertical power semiconductor switch having an IGBT-with-built-in-diode bottom-side structure combined with a SJMOS topside structure in such a way as to provide fast switching with low switching losses (MOSFET), low on-resistance at low currents (SJMOS), low on-resistance at high currents (IGBT), and high current-density capability (IGBT).

Methods and designs are provided for a vertical power semiconductor switch having an IGBT-with-built-in-diode bottom-side structure combined with a SJMOS topside structure in such a way as to provide fast switching with low switching losses (MOSFET), low on-resistance at low currents (SJMOS), low on-resistance at high currents (IGBT), and high current-density capability (IGBT).

A thermal impedance amplifier includes: a resistive layer including: a resistance member; a first electrode in electrical communication with the resistance member; and a second electrode in electrical communication with the resistance member; a switch layer opposing the resistive layer and including: a switch member; a first switch electrode in electrical communication with the switch member; and a second switch electrode in electrical communication with the switch member, the switch member: switching from a first resistance to a second resistance in response to receiving phonons from the resistance member, being superconductive at the first resistance, and producing an amplified voltage in response to being at the second resistance; and a thermal conductor interposed between the resistance member and the switch member.

A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical-current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry.

Methods and designs are provided for a vertical power semiconductor switch having an IGBT-with-built-in-diode bottom-side structure combined with a SJMOS topside structure in such a way as to provide fast switching with low switching losses (MOSFET), low on-resistance at low currents (SJMOS), low on-resistance at high currents (IGBT), and high current-density capability (IGBT).

A semiconductor-superconductor hybrid device comprises a semiconductor component and a superconductor component arranged over the semiconductor component. The superconductor component comprises a continuous portion of a superconductor material and a discontinuous portion of a non-ferromagnetic metal. The discontinuous portion is configured to increase the critical field of the superconductor component. It has been found that providing a superconductor component with a discontinuous portion of non-ferromagnetic metal may increase the critical field of the superconductor component, allowing the device to be operated in a stronger magnetic field. Further aspects provide a method of fabricating the device, and the use of a non-ferromagnetic metal to increase the critical field of a superconductor component of a semiconductor-superconductor hybrid device.