A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

The present invention provides a terahertz oscillator utilizing a GaN Gunn diode. A terahertz wave is generated in the active layer of the Gunn diode fabricated on GaN substrate. A GaN substrate is designed to act as a waveguide of the terahertz wave. Since the waveguide and the Gunn diodes are integrated, the terahertz wave generated in the active layer couples well with the waveguide made of the GaN substrates. The terahertz wave is emitted from the edge of the waveguide efficiently. To ensure high-reliability through reduction of radiation loss and mitigation of electromigration of anode metal, a GaN substrate with low dislocation density is used. The dislocation density of the GaN substrate is less than 1×10.sup.6 cm.sup.−2. Particularly, usage of a GaN substrate made by the ammonothermal method is preferred.

The present invention provides a terahertz oscillator utilizing a GaN Gunn diode. A terahertz wave is generated in the active layer of the Gunn diode fabricated on GaN substrate. A GaN substrate is designed to act as a waveguide of the terahertz wave. Since the waveguide and the Gunn diodes are integrated, the terahertz wave generated in the active layer couples well with the waveguide made of the GaN substrates. The terahertz wave is emitted from the edge of the waveguide efficiently. To ensure high-reliability through reduction of radiation loss and mitigation of electromigration of anode metal, a GaN substrate with low dislocation density is used. The dislocation density of the GaN substrate is less than 1×10.sup.6 cm.sup.−2. Particularly, usage of a GaN substrate made by the ammonothermal method is preferred.

A composition of matter consisting primarily of a stabilizing element and a transition metal oxide, wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions, and the composition of matter has a canted crystal structure.

A composition of matter consisting primarily of a stabilizing element and a transition metal oxide, wherein the transition metal oxide is an anti-ferromagnetic Mott insulator with strong spin orbit interactions, and the composition of matter has a canted crystal structure.

A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.