Provided is a planar nano-oscillator array having phase locking function, including two or more planar nano-oscillators which are arranged in parallel. The two oscillators are connected by planar resistors and capacitors, and a structure thereof includes: electrodes; respectively introducing two pairs of laterally arranged parallel insulation notch grooves into two-dimensional electron gas layers, so as to form oscillation channels; vertically disposing separating insulation notch grooves, so that a planar resistor A with low resistance which is connected to the electrode is formed on the left side, and a planar resistor B with low resistance which is connected to the electrode is formed on the right side; and arranging, between the two oscillators, an insulation capacitor notch groove which is parallel to the oscillation channels, insulating materials having a high dielectric constant being filled therein.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.

Provided is a planar nano-oscillator array having phase locking function, including two or more planar nano-oscillators which are arranged in parallel. The two oscillators are connected by planar resistors and capacitors, and a structure thereof includes: electrodes; respectively introducing two pairs of laterally arranged parallel insulation notch grooves into two-dimensional electron gas layers, so as to form oscillation channels; vertically disposing separating insulation notch grooves, so that a planar resistor A with low resistance which is connected to the electrode is formed on the left side, and a planar resistor B with low resistance which is connected to the electrode is formed on the right side; and arranging, between the two oscillators, an insulation capacitor notch groove which is parallel to the oscillation channels, insulating materials having a high dielectric constant being filled therein.

Gunn diodes are included in a device plane of an integrated circuit device, e.g., a diode array is in the same plane as a transistor array. A Gunn diode includes two highly n-doped regions surrounding a lower-doped n-type region. The highly-doped regions may be formed through epitaxial deposition. A Gunn diode may be arranged as a vertical diode, with two contacts stacked vertically over and under the diode, or as a horizontal diode, with two contacts at opposite horizontal ends of the diode. The Gunn diodes may be formed around a fin, e.g., with a front-side contact over the fin and a back-side contact under the fin.