A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

Provided is a multi-negative differential resistance device. The multi-negative differential resistance device includes a first negative differential resistance device and a second negative differential resistance device connected in parallel with the first negative differential resistance device, and a peak and a valley of the first negative differential resistance device and a peak and a valley of the second negative differential resistance device are synthesized, and, thus, the multi-negative differential resistance device has two peaks and two valleys.

An integrated neuron circuit structure comprising at least one thin-film resistor, one Metal Insulator Metal capacitor and one Negative Differential Resistance device.

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.

A rectifier is provided for converting an oscillating electromagnetic field into a direct current and comprises an electrically conductive antenna layer configured to absorb electromagnetic radiation, an electrically conductive mirror layer configured to provide an electromagnetic mirror charge of the antenna layer, an electrically insulating tunnel barrier layer positioned between the antenna layer and the mirror layer, and an electronic circuit electrically connected between the conductive mirror layer and the conductive antenna layer. The rectifier employs a metamaterial configuration for room temperature rectification of radiation in regions of the electromagnetic spectrum comprising the MWIR and LWIR regions. Methods for use of the rectifier in rectifying and detecting radiation are described.