Provided is an apparatus for treating waste gas of the electronics industry, and the apparatus includes: a reaction chamber in which an inlet and an outlet are formed and an inner space for purifying waste gas is formed; a first partition plate extending from an inner wall of the reaction chamber facing the inlet in a direction toward the inlet, dividing the inner space into a pre-treatment zone for collecting dust in the waste gas and a remaining purification zone; a second partition plate extending vertically downward from a ceiling of the reaction chamber, dividing the purification zone into a thermal decomposition zone for heating and thermally decomposing waste gas and a post-treatment zone; and a heater installed at the ceiling of the reaction chamber so as to be located in the thermal decomposition zone to thermally decompose a perfluorinated compound by heating waste gas introduced into the thermal decomposition zone; and a dry scrubber unit including one or more catalysts to collect at least one of the dust, a fluorine compound, and nitrous oxide (N2O) in waste gas introduced into the post-treatment zone.

The present invention provides an energy-efficient method and apparatus that can achieve exhaust gas abatement with a minimum use of diluent nitrogen gas. More specifically, the present invention is directed to a method and apparatus for exhaust gas abatement under reduced pressure, in which an exhaust gas supplied from an exhaust gas source via a vacuum pump is decomposed by heat of a high-temperature plasma under a reduced pressure.

Provided is an apparatus for treating waste gas of the electronics industry, and the apparatus includes: a reaction chamber in which an inlet and an outlet are formed and an inner space for purifying waste gas is formed; a first partition plate extending from an inner wall of the reaction chamber facing the inlet in a direction toward the inlet, dividing the inner space into a pre-treatment zone for collecting dust in the waste gas and a remaining purification zone; a second partition plate extending vertically downward from a ceiling of the reaction chamber, dividing the purification zone into a thermal decomposition zone for heating and thermally decomposing waste gas and a post-treatment zone; and a heater installed at the ceiling of the reaction chamber so as to be located in the thermal decomposition zone to thermally decompose a perfluorinated compound by heating waste gas introduced into the thermal decomposition zone; and a dry scrubber unit including one or more catalysts to collect at least one of the dust, a fluorine compound, and nitrous oxide (N2O) in waste gas introduced into the post-treatment zone.

Disclosed is a plasma etching method including a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethly-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed; and a second step of etching the etching target using plasma generated from the mixed gas:

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The present disclosure is directed to methods of producing zincoaluminosilicate structures with AEI, CHA, and GME topologies using organic structure directing agents (OSDAs), and the compositions and structures resulting from these methods.

Provided is a preparation method and use method of a material for deep purification of HF electronic gas. A metal fluoride-loaded activated carbon material AC/MFx.nH20 is prepared, and a mixed gas flow of carbonyl fluoride and high-purity nitrogen is used to deeply dehydrate the material to obtain the material for deep purification of HF electronic gas AC/MFx. This kind of material has fluoride that can form crystal water to form hydrated metal fluoride, and has strong water absorption properties. Moreover, the anhydrous fluoride and activated carbon do not have to face the problem of being corroded by HF, and the collapse of framework structure and the secondary pollution to HF from reaction products would not be caused. The material has the advantages of high purity and extremely low moisture content when being used for efficiently removing moisture in HF.

One or more embodiments described herein relate to abatement systems for reducing Br.sub.2 and Cl.sub.2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl.sub.2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br.sub.2. Br.sub.2 and Cl.sub.2 are corrosive and toxic. However, the addition of H.sub.2O in the plasma reactor quenches the Br.sub.2 and Cl.sub.2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

A heated inlet tube for use in a wet scrubber is disclosed. In one embodiment, the heated inlet tube comprises a heated tube concentric to the inlet tube to which a heated gas is applied thereby maintaining temperature of a waste gas stream as it flows through the inlet tube. In a further embodiment, an insulating tube concentrically surrounds the heated tube to further maintain the temperature of the waste gas stream.

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Described are boron oxide-containing adsorbents that include porous adsorbent base and boron oxide on surfaces of the base, as well as devices that include the boron oxide-containing adsorbent, and related methods of preparing and using the boron oxide-containing adsorbent.