The present disclosure provides a method for preparing a high cohesive energy adsorbent for fluoride removal, which includes the following steps: S1. adding NaHF.sub.2—NiF.Math.6H.sub.2O additive to SiCO ceramic powder, and sintering at a temperature of 310-330° C. for 18-22h to obtain a sintered substance; S2. grinding the sintered substance to obtain particles with a size of 2-3 mm, and mixing the particles with polyacrylonitrile to form a composite polymer; and S3. molding the composite polymer by a vacuum baking process at a temperature of 75-85° C., then performing ball milling and sieving to obtain the high cohesive energy adsorbent for fluoride removal. The high cohesive energy adsorbent for fluoride removal may be used in the adsorption and separation of the C.sub.2F.sub.6—CHF.sub.3—CClF.sub.3 mixture system, and the contents of CHF.sub.3 and CClF.sub.3 are lowered to less than 10ppmv.

Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.

A method of manufacturing an organic light-emitting display apparatus includes: forming a lift-off layer on a substrate including a first electrode, the lift-off layer including a fluoropolymer; forming a pattern layer on the lift-off layer; etching the lift-off layer between patterns of the pattern layer by utilizing a first solvent to expose the first electrode; forming an organic functional layer on the first electrode and the pattern layer, the organic functional layer including an emission layer; removing remaining portions of the lift-off layer by utilizing a second solvent; and forming a second electrode on the organic functional layer.

A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

The object is to selectively separate a linear compound from a treatment subject containing linear and alicyclic compounds as double bond-containing hydrocarbon compounds in which every hydrogen is replaced with fluorine or chlorine. A method of separating a double bond-containing linear hydrocarbon in which every hydrogen is replaced with fluorine or chlorine includes bringing a treatment subject containing a double bond-containing linear hydrocarbon in which every hydrogen is replaced with fluorine or chlorine and a double bond-containing alicyclic hydrocarbon in which every hydrogen is replaced with fluorine or chlorine into contact with at least one amine compound selected from the group consisting of a heterocyclic aromatic amine compound and a tertiary amine represented by a formula: NR.sup.1R.sup.2R.sup.3 (R.sup.1, R.sup.2, and R.sup.3 are each independently an alkyl group, and two thereof may in combination form an alkylene group that is optionally interrupted by oxygen or sulfur).

An electrostatic precipitator includes: a chamber having an inlet configured to receive an effluent stream for treatment and an outlet configured to convey a treated effluent stream; and an electrode structure housed within the chamber, the electrode structure being operable to generate a corona for treating the effluent stream to produce the treated effluent stream, wherein the electrode structure includes a comb structure having a shaft and a plurality of teeth extending from the shaft, the corona being generated at a free tip of each tooth in response to a voltage when applied across the electrode structure and the chamber The electrode teeth provide a reduced area from which the corona is generated, thereby improving the corona, but also the reduced size of the electrode teeth compared to existing electrode structures provides a reduced area for the accumulation of particulates and facilitates the shedding of those particulates from the electrodes.

One or more embodiments described herein relate to abatement systems for reducing Br.sub.2 and Cl.sub.2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl.sub.2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br.sub.2. Br.sub.2 and Cl.sub.2 are corrosive and toxic. However, the addition of H.sub.2O in the plasma reactor quenches the Br.sub.2 and Cl.sub.2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

The present disclosure is directed to microporous crystalline aluminosilicate structures with GME topologies having pores containing organic structure directing agents (OSDAs) comprising at least one piperidinium cation, the compositions useful for making these structures, and methods of using these structures. In some embodiments, the crystalline zeolite structures have a molar ratio of Si:Al that is greater than 3.5.

A substrate processing apparatus, including a reaction chamber to process a substrate, a photon source to provide the reaction chamber with photons from the top side of the reaction chamber, a substrate support to support the substrate, a chemical inlet to provide the reaction chamber with a reactive chemical; and a chemical outlet to exhaust gases from the reaction chamber, the chemical outlet including a surface separating the reaction chamber from a surrounding space.

There is provided an exhaust gas processing apparatus configured to cause a processing gas to be exposed to or come into contact with a liquid and thereby detoxify the processing gas. The exhaust gas processing apparatus comprises a suction casing provided with an inlet which the processing gas is sucked into and with an outlet which the processing gas is flowed out from; a liquid tank configured to receive an outlet-side part of the suction casing and store the liquid therein; and one or multiple spray nozzles placed in the liquid tank. The outlet of the suction casing is arranged to be located above a liquid surface of the liquid stored in the liquid tank. The one or multiple spray nozzles are configured to spray the liquid from around the outlet of the suction casing to a peripheral part of the outlet.