A method and apparatus for delaminating a polymer film from a carrier plate is disclosed. The carrier plate is at least partially transparent and has deposited on it a pixelated pattern layer of light-absorptive material, upon which is deposited a layer of light-reflective material. A polymer film, which is to be delaminated, is deposited on the light-reflecting material layer. Next, a pulsed light source is utilized to irradiate through the carrier plate from the side opposite the polymer film to heat the light-absorptive material layer. The heated areas of the light-absorptive material layer, in turn, heat the polymer film through conduction at the interface between the light-absorptive material layer and the polymer film, thereby generating gas from the polymer film by its thermal decomposition, which allows the polymer film to be released from the carrier plate.

A film peeling apparatus including a peeling unit, a peeling unit position adjusted, and a clamp. The peeling unit has uneven portions at an end portion thereof. The peeling unit is configured to peel off a protection film attached on a display panel. The peeling unit position adjuster is connected to the peeling unit. The peeling unit position adjuster is configured to adjust a position of the peeling unit. The clamp is disposed separately from the peeling unit. The clamp is configured to clamp the peeling unit.

The invention broadly relates to release layer compositions that enable thin wafer handling during microelectronics manufacturing. Preferred release layers are formed from compositions comprising a polyamic acid or polyimide dissolved or dispersed in a solvent system, followed by curing and/or solvent removal at about 250° C. to about 350° C. for less than about 10 minutes, yielding a thin film. This process forms the release compositions into polyimide release layers that can be used in temporary bonding processes, and laser debonded after the desired processing has been carried out.

A method of processing a substrate, with a first major surface of the substrate removably bonded to a first major surface of a first carrier and a second major surface of the substrate removably bonded to a first major surface of a second carrier, includes initiating debonding at a first location of an outer peripheral bonded interface between the substrate and the first carrier to separate a portion of the first carrier from the substrate. The method further includes propagating a first debond front from the first debonded location along a first direction extending away from the first debonded location by sequentially applying a plurality of lifting forces to the first carrier at a corresponding plurality of sequential lifting locations of the first carrier.

An apparatus for separating a wafer from a carrier includes a platform having an upper surface, a tape feeding unit, a first robot arm, and a controller coupled to the platform. The controller is configured to mount a wafer frame, by using the tape feeding unit, on a wafer of a wafer assembly on the upper surface of the platform. The wafer assembly includes the wafer, a carrier, and a layer of wax between the wafer and the carrier. The controller is also configured to heat the upper surface of the platform to a predetermined temperature and separate, by the first robot arm, the wafer and the wafer frame mounted thereon from the carrier.

A delamination method for delaminating a laminated substrate which includes a first and a second substrates bonded to each other, includes: adjusting a position of the laminated substrate at a holding unit by a position adjusting unit and disposing the holding unit at a predetermined height position; disposing a sharp member of a delamination inducing unit at a predetermined height position; detecting a contact of the sharp member by bringing the sharp member into contact with a side surface of one end portion of the laminated substrate; inserting the sharp member into the side surface of the one end portion of the laminated substrate; and delaminating the second substrate from the first substrate by a plurality of suction movement units which sucks the second substrate of the laminated substrate to move the second substrate away from the first substrate.

Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

An apparatus for manufacturing an element array includes a substrate hold means, a laser radiation device, and a collection mechanism. The substrate hold means holds a substrate including an adhesive layer on which elements are attached in a predetermined array while a surface of the adhesive layer is inclined relative to a horizontal surface at a predetermined angle. The laser radiation device radiates a laser to a specific element among the elements attached on the adhesive layer. The collection mechanism is disposed below the substrate and configured to receive the specific element falling by the laser radiation.

An exemplary embodiment of the present invention provides a method of transferring a micro device. The method of transferring the micro device includes: separating a transferring film from a micro device transferred to a target substrate and bending the transferring film upwardly to form a bent circular arc, and pressurizing an upper transferring film fed after the bent circular arc is formed by a pressurizing roller rotating at an upper side of the target substrate.

A chip ejecting apparatus includes a table configured to be provided with a dicing tape and a target chip adhered to an upper surface of the dicing tape, an ejector unit including a plurality of gas holes configured to inject a gas toward a lower surface of the dicing tape, and a control unit configured to separately control on/off operations of the plurality of gas holes and select an active gas hole group from the plurality of gas holes. The active gas hole group is selected to overlap the target chip, and is configured to inject the gas toward the dicing tape along a direction from a first edge of the target chip toward a second edge of the target chip opposite to the first edge of the target chip.