Patent classifications
Y
Y10
Y10S
438/00
Y10S438/914
Y10S438/919
Y10S438/919
Semiconductor device and fabrication method thereof
09786787
·
2017-10-10
·
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A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.