A contact hole pattern-forming method includes forming a hole pattern on a front face side of a substrate, directly or via other layer. A first composition including a first polymer is applied circularly in a planar view so as to coat lateral faces of holes of the hole pattern. A resin layer is provided on the front face side of the substrate and inside the lateral faces of the holes from a second composition including a second polymer. The resin layer is heated. A part of the resin layer heated is removed. The substrate is etched using a resist pattern formed. The first polymer includes a group being bound to at least one end of a main chain of the first polymer, and being capable of interacting with a third polymer constituting the hole pattern. The second polymer is a homopolymer or a random copolymer.

A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in a part of the field effect transistors is different from the thickness of gate insulating film in the other field effect transistors among the plurality of the field effect transistors.