A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.

A filter element arrangement is provided which includes a media pack comprising Z-filter media, a preform and an overmold sealing a portion of the interface between the preform and the media pack, and also forming an air cleaner seal for the filter element. The overmold preferably comprises molded, foamed, polyurethane. A variety of media pack shapes can be used.

A transmission having a pressure controlled vent system, including a vent tube configured to engage a transmission such that a first opening of the vent tube is in fluid communication with an upper portion of a transmission cavity, a second end defining a second opening configured to be in fluid communication with an external atmosphere, and a bifurcated portion between the first end and the second end. The bifurcated portion includes a first tube segment and a second tube segment in parallel with the first tube segment. A pressure relief valve disposed in-line within the first tube segment and a vacuum relief valve disposed in-line within the second tube segment. The pressure relief valve cooperates with the vacuum relief valve to maintain a predetermined range of pressure differential between the first opening and the second opening. The vent tube may also include a moisture and/or a transmission fluid separator.

Provided is a catalyst article for simultaneously remediating the nitrogen oxides (NOx), particulate matter, and gaseous hydrocarbons present in diesel engine exhaust streams. The catalyst article has a soot filter coated with a material effective in the Selective Catalytic Reduction (SCR) of NOx by a reductant, e.g., ammonia.

Provided is a catalyst article for simultaneously remediating the nitrogen oxides (NOx), particulate matter, and gaseous hydrocarbons present in diesel engine exhaust streams. The catalyst article has a soot filter coated with a material effective in the Selective Catalytic Reduction (SCR) of NOx by a reductant, e.g., ammonia.

An electrically regeneratable filter element comprises at least two flanks, each of these flanks comprising a stiff material layer. Each of these flanks has at least one thermally and electrically insulated side. The filter element comprises further a metal fiber fleece being pleated according to pleating lines providing an edge with pleat openings. The metal fiber fleece is mounted between the flanks, in such a way that the thermally and electrically insulated sides make contact with the edge, meanwhile these sides closing the pleat openings.

Provided is a catalyst article for simultaneously remediating the nitrogen oxides (NOx), particulate matter, and gaseous hydrocarbons present in diesel engine exhaust streams. The catalyst article has a soot filter coated with a material effective in the Selective Catalytic Reduction (SCR) of NOx by a reductant, e.g., ammonia.

Provided is a catalyst article for simultaneously remediating the nitrogen oxides (NOx), particulate matter, and gaseous hydrocarbons present in diesel engine exhaust streams. The catalyst article has a soot filter coated with a material effective in the Selective Catalytic Reduction (SCR) of NOx by a reductant, e.g., ammonia.

A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.

A filter element arrangement is provided which includes a media pack comprising Z-filter media, a preform and an overmold sealing a portion of the interface between the preform and the media pack, and also forming an air cleaner seal for the filter element. The overmold preferably comprises molded, foamed, polyurethane. A variety of media pack shapes can be used.