A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.

Provided is a positive electrode material slurry for secondary battery including a positive electrode active material, a conductive agent, a binder, and a solvent, wherein the conductive agent includes a first conductive agent and a second conductive agent having different particle shapes and sizes.

Since the conductive agent of the present invention may be uniformly dispersed in the positive electrode active material by including a point-type conductive agent, as the first conductive agent, and carbon nanotubes (CNTs) subjected to a grinding process as the linear second conductive agent, conductivity of an electrode to be prepared may be improved and a secondary battery having improved high-rate discharge capacity characteristics may be provided.

A field effect transistor and a sensor using the field effect transistor is provided. The field effect transistor can be manufactured so as to have uniform properties by simple steps at low costs, and can stably detect, when used as a sensor, a very small amount of analyte with a high sensitivity while the properties are hardly deteriorated. A channel of the field effect transistor is constituted by a single-walled carbon nanotube thin film that is grown, by a chemical vapor deposition method, using particles of a nonmetallic material as growth nuclei, the nonmetallic material containing 500 mass ppm or less metallic impurities that contain a metal and its compounds.

The disclosure generally relates to a dispersion of nanoparticles in a liquid medium. The liquid medium is suitably water-based and further includes an ionic liquid-based stabilizer in the liquid medium to stabilize the dispersion of nanoparticles therein. The stabilizer can be polymeric or monomeric and generally includes a moiety with at least one quaternary ammonium cation from a corresponding ionic liquid. The dispersion suitably can be formed by shearing or otherwise mixing a mixture/combination of its components. The dispersions can be used to form nanoparticle composite films upon drying or otherwise removing the liquid medium carrier, with the stabilizer providing a nanoparticle binder in the composite film. The films can be formed on essentially any desired substrate and can impart improved electrical conductivity and/or thermal conductivity properties to the substrate.

Provided herein is a nanopore structure, which in one aspect is a “carbon nanotube porin”, that comprises a short nanotube with an associated lipid coating. Also disclosed are compositions and methods enabling the preparation of such nanotube/lipid complexes. Further disclosed is a method for therapeutics delivery that involves a drug delivery agent comprising a liposome with a NT loaded with a therapeutic agent, introducing the therapeutic agent into a cell or a tissue or an organism; and subsequent release of the therapeutic agents into a cell.

Using SWNT-CA as scaffolds to fabricate stiff, highly conductive polymer (PDMS) composites. The SWNT-CA is immersing in a polymer resin to produce a SWNT-CA infiltrated with a polymer resin. The SWNT-CA infiltrated with a polymer resin is cured to produce the stiff and electrically conductive composite of carbon nanotube aerogel and polymer.

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

A method of manufacturing a semiconductor package including coating a flux on a connection pad provided on a first surface of a substrate, the flux including carbon nanotubes (CNTs), placing a solder ball on the connection pad coated with the flux, forming a solder layer attached to the connection pad from the solder ball through a reflow process, and mounting a semiconductor chip on the substrate such that the solder layer faces a connection pad in the semiconductor chip may be provided.

A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

Provided is a carbon nanotube (CNT) network which can improve an electrical joint so that a sufficient amount of current flows into a thin film and the amount of current is controlled. A network of CNT or a CNT hybrid material is constructed by distributing, as a node between CNT and CNT in a CNT thin film, a fine particle of an inorganic semiconductor and preferably fine particles of a metal halide, a metal oxide, or a metal sulfide.