A quantum wire device includes a barrier formed by an insulator or a wide bandgap semiconductor, and metal quantum wires comprising a metal material and embedded in the barrier. Potential wells are formed for electrons in the metal quantum wires by the insulator or the wide bandgap semiconductor. The work function of the metal quantum wires is reduced by quantum confinement compared to a bulk form of the metal material. The metal quantum wires are electrically connected. The metal quantum wires include an exposed active area for electron emission or electron collection.

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

A polarizing light emitting plate includes a polarizing layer having a polarizing axis substantially parallel to a first direction, a quantum rod layer including quantum rods aligned in the first direction, and an attachment layer between the polarizing layer and the quantum rod layer and comprising an adhesive material.

The disclosure related to a method for making a nanowire structure. First, a free-standing carbon nanotube structure is suspended. Second, a metal layer is coated on a surface of the carbon nanotube structure. The metal layer is oxidized to grow metal oxide nanowires.

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

The single layer compressive substrate force sensor may include electrode patterns formed directly on a first side and second side of the compressive substrate. At least some of the electrode patterns are configured to provide a change in capacitance proportional with a compressive force applied to at least one of the electrode patterns, which compresses the compressive substrate. The single layer compressive substrate force sensor may include a first top electrode and a second top electrode pattern separated by an insulator to void contact between the electrode patterns. In operation, the first top electrode pattern and the second top electrode pattern are configured to provide projective capacitance, and thus provide detection of light touches or hover actions by an object.

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CND reactor. The substrate comprising the seed structure (2) and the carbon structure (1) is heated to a process temperature. At least one etching gas is injected into the process chamber, the etching gas having the chemical formula AO.sub.mX.sub.n, AO.sub.mX.sub.nY.sub.p or A.sub.mX.sub.n, wherein A is selected from a group of elements that includes S, C and N, wherein O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero. Through a chemical reaction with the etching gas, the seed structure is converted into a gaseous reaction product. A carrier gas flow is used to remove the gaseous reaction product from the process chamber.

Nanowire synthesis and one dimensional nanowire synthesis of titanates and cobaltates. Exemplary titanates and cobaltates that are fabricated and discussed include, without limitation, strontium titanate (SrTiO.sub.3), barium titanate (BaTiO.sub.3), lead titanate (PbTiO.sub.3), calcium cobaltate (Ca.sub.3Co.sub.4O.sub.9) and sodium cobaltate (NaCo.sub.2O.sub.4).