Patent classifications
Y10S977/814
METHOD AND APPARATUS FOR THE ANALYSIS AND IDENTIFICATION OF MOLECULES
An apparatus and method for performing analysis and identification of molecules have been presented. In one embodiment, a portable molecule analyzer includes a sample input/output connection to receive a sample, a nanopore-based sequencing chip to perform analysis on the sample substantially in real-time, and an output interface to output result of the analysis.
Thermoelectric material, thermoelectric element, optical sensor, and method for manufacturing thermoelectric material
This invention relates to a thermoelectric material constituted of nanostructures and a thermoelectric element and an optical sensor including the same, as well as to a method for manufacturing a thermoelectric material constituted of nanostructures. An object of the present disclosure is to achieve better thermoelectric characteristics of the thermoelectric material containing nanoparticles. The thermoelectric material includes a first material having a band gap and a second material different from the first material. The thermoelectric material contains a plurality of nanoparticles distributed in a base material which is a mixture of the first material and the second material. A composition of the second material in the thermoelectric material is not lower than 0.01 atomic % and not higher than 2.0 atomic % of the thermoelectric material.
Saturable-absorber-based laser system
Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.
Advanced processing apparatus comprising a plurality of quantum processing elements
The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon CMOS fabrication technology. Transistor-based control circuits, together with floating gates, are used to operate a two-dimensional array of qubits. The qubits are defined by the spin states of a single electron confined in a quantum dot.
Nanothermometer
There is provided a semiconductor nanocrystal or quantum dot comprising a core made of a material and at least one shell made of another material. Also there is provided a composite comprising a plurality of such nanocrystals or quantum dots. Moreover, there is provided a method of measuring the temperature of an object or area, comprising using a temperature sensor comprising a semiconductor nanocrystal or quantum dot of the invention.
High-brightness luminescent-based lighting device
The invention provides a lighting device configured to generate lighting device light, wherein the lighting device light includes an emission band in the visible part of the spectrum which represents at least 80% of the total power (W) of the lighting device light in the visible part of the spectrum, wherein the emission band has a full width half maximum of at maximum 60 nm, and wherein the emission band has a peak maximum (MM3), wherein said emission band includes luminescent material light, wherein the lighting device includes (i) a solid state-based light source, configured to generate light source light having a peak maximum (MX2), and (ii) a luminescent material, configured to convert at least part of the light source light into said luminescent material light, wherein the solid state-based light source is configured to provide said light source light with 0<MM3MX2<60 nm.
Wafer-scale integration of vacancy centers for spin qubits
Embodiments of the present disclosure propose two methods for integrating vacancy centers (VCs) on semiconductor substrates for forming VC-based spin qubit devices. The first method is based on using a self-assembly process for integrating VC islands on a semiconductor substrate. The second method is based on using a buffer layer of a III-N semiconductor material over a semiconductor substrate, and then integrating VC islands in an insulating carbon-based material such as diamond that is either grown as a layer on the III-N buffer layer or grown in the openings formed in the III-N buffer layer. Integration of VC islands on semiconductor substrates typically used in semiconductor manufacturing according to any of these methods may provide a substantial improvement with respect to conventional approaches to building VC-based spin qubit devices and may promote wafer-scale integration of VC-based spin qubits for use in quantum computing devices.
Light emitting apparatus using composite material
The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.
Optical film
The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.
Method of manufacturing composite material
The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.