Patent classifications
Y10S977/814
PEROVSKITE NANOCRYSTALLINE PARTICLES AND OPTOELECTRONIC DEVICE USING SAME
Provided are perovskite nanocrystalline particle and an optoelectronic device using the same. The perovskite nanocrystalline particle may include a perovskite nanocrystalline structure while being dispersible in an organic solvent. Accordingly, the perovskite nanocrystalline particle in accordance with the present invention has therein a perovskite nanocrystal having a crystalline structure in which FCC and BCC are combined; forms a lamellar structure in which an organic plane and an inorganic plane are alternately stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, the perovskite nanocrystalline particle have a particle size greater than or equal to a Bohr diameter beyond a quantum confinement effect, and simultaneously can implement high emission efficiency and emission wavelength which is almost not dependent on particle size. Furthermore, the perovskite nanocrystalline particle in accordance with the present invention, as a nanoparticle which is dispersible in an organic solvent, is applicable in various electronic devices such as light emitting devices, lasers, solar cells, etc.
METHOD AND APPARATUS FOR THE ANALYSIS AND IDENTIFICATION OF MOLECULES
An apparatus and method for performing analysis and identification of molecules have been presented. In one embodiment, a portable molecule analyzer includes a sample input/output connection to receive a sample, a nanopore-based sequencing chip to perform analysis on the sample substantially in real-time, and an output interface to output result of the analysis.
SILICON-BASED QUANTUM DOT DEVICE
A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (5.sub.1, 5.sub.2: FIG. 5). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.
PHOTODIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The photodiode including the graphene-silicon quantum dot hybrid structure of the present disclosure may be easily manufactured, may be manufactured over a large area, has a wide photodetection band from the ultraviolet light region to the near infrared region, and allows selective absorption energy control.
NANOTHERMOMETER
There is provided a semiconductor nanocrystal or quantum dot comprising a core made of a material and at least one shell made of another material. Also there is provided a composite comprising a plurality of such nanocrystals or quantum dots. Moreover, there is provided a method of measuring the temperature of an object or area, comprising using a temperature sensor comprising a semiconductor nanocrystal or quantum dot of the invention.
Method and apparatus for the analysis and identification of molecules
An apparatus and method for performing analysis and identification of molecules have been presented. In one embodiment, a portable molecule analyzer includes a sample input/output connection to receive a sample, a nanopore-based sequencing chip to perform analysis on the sample substantially in real-time, and an output interface to output result of the analysis.
TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.
METHOD FOR MANUFACTURING QUANTUM DOT POLARIZATION PLATE
The present invention provides a method for manufacturing a quantum dot polarization plate. The method for manufacturing a quantum dot polarization plate according to the present invention forms a quantum dot layer and a polarization layer separately on different bases to respectively make a quantum dot film and a polarization film and then bonds the quantum dot film and the polarization film together to form a quantum dot polarization plate. The quantum dot polarization plate is not made through successive formations of films on the same base so that the quantum dot layer of the quantum dot polarization plate can be manufactured through a high-temperature process or a low-temperature process, thereby expanding the range of material section and manufacture for quantum dots. The quantum dot polarization plate manufactured with such process helps increase color gamut coverage of the display panel, but does not cause elimination of light polarization.
Array substrate, manufacturing method thereof, and display apparatus
A method for manufacturing an array substrate includes: forming a pixel defining layer having a plurality of accommodating wells over a substrate, and forming a hydrophobic material layer over the pixel defining layer. A side wall of each accommodating well comprises a hydrophilic side surface. The hydrophilic side surface is partially covered by the hydrophobic material layer to thereby form an overlapped region having a hydrophobic outer surface and an exposed region having a hydrophilic outer surface. The overlapped region is on a side of the exposed region distal to the substrate. The array substrate manufactured thereby allows an organic functional layer to be evenly fabricated in each accommodating well of the pixel defining layer via inkjet printing.
ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
A method for manufacturing an array substrate includes: forming a pixel defining layer having a plurality of accommodating wells over a substrate, and forming a hydrophobic material layer over the pixel defining layer. A side wall of each accommodating well comprises a hydrophilic side surface. The hydrophilic side surface is partially covered by the hydrophobic material layer to thereby form an overlapped region having a hydrophobic outer surface and an exposed region having a hydrophilic outer surface. The overlapped region is on a side of the exposed region distal to the substrate. The array substrate manufactured thereby allows an organic functional layer to be evenly fabricated in each accommodating well of the pixel defining layer via inkjet printing.